2N3735

Data Sheet No. 2N3735 Type 2N3735 Geometry TBD Polarity NPN Qual Level: Pending Features: • General-purpose NPN silicon switching transistor which operates over a wide temperature range. Housed in a TO-39 case. Also it will be available in chip form using the TBD chip geometry. The Min and Max limits shown are per MIL-PRF-19500/395 which Semicoa meets in all cases. Generic Part Number: 2N3735 REF: MIL-PRF-19500/395 • • • TO-39 Maximum Ratings TC = 25oC unless otherwise specified Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power, TA = +25oC Power, TC = +25oC Thermal Resistance Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT PT RJC TJ TSTG Rating 40 75 5.0 1.5 1.0 2.9 0.060 -55 to +200 -55 to +200 o Unit V V V mA W W C/mW o C C o Data Sheet No. 2N3735 Electrical Characteristics TC = 25 C unless otherwise specified o OFF Characteristics Collector-Base Breakdown Voltage IC = 10 mA Collector-Emitter Breakdown Voltage IC = 10 µA Emitter-Base Breakdown Voltage IE = 10 µA Collector-Base Cutoff Current VCB = 30 V Emitter-Base Cutoff Current VEB = 4.0 V Collector-Emitter Cutoff Current VCE = 30 V, VEB = 2.0 V VCB = 30 V, VEB = 2.0 V, TA = +150 C o Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO1 IEBO1 ICEX1 ICEX2 Min 40 75 5.0 --------- Max ------250 100 200 250 Unit V V V nA nA nA µA ON Characteristics Forward Current Transfer Ratio IC = 10 mA, VCE = 1.0 V IC = 150 mA, VCE = 1.0 V (pulse test) IC = 500 mA, VCE = 1.0 V (pulse test) IC = 1.0 A, VCE = 1.5 V (pulse test) IC = 1.5 A, VCE = 5.0 V (pulse test) IC = 500 mA, VCE = 1.0 V (pulsed), TA = +150oC Symbol hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 VCE(sat)1 VCE(sat)2 VCE(sat)3 VCE(sat)4 VBE(sat)1 VBE(sat)2 VBE(sat)3 VBE(sat)4 Min 30 40 40 20 20 15 --------------0.9 Max ----140 80 ----0.2 0.3 0.9 0.30 0.8 1.0 1.2 1.4 Unit ------------V dc V dc V dc V dc V dc V dc V dc V dc Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 150 mA, IB = 15 mA (pulse test) IC = 500 mA, IB = 50 mA (pulse test) IC = 1.0 A, IB = 100 mA (pulse test) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 150 mA, IB = 15 mA (pulse test) IC = 500 mA, IB = 50 mA (pulse test) IC = 1.0 A, IB = 100 mA (pulse test) Small Signal Characteristics Forward Current Transfer Ratio IC = 50 mA, VCE = 10 V, f = 100 MHz Open Circuit Output Capacitance VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz Input Capacitance, Output Open Circuited VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz Delay Time VCC = 30 V, VBE = 2 V, IC = 1 A, IB1 = 100 mA Symbol |hFE| COBO CIBO td tr toff Min 2.5 ----------- Max 6.0 9.0 80 8.0 40 60 Unit --pF pF ns ns ns Rise Time VCC = 30 V, VBE = 2 V, IC = 1 A, IB1 = 100 mA Turn-off Time VCC = 30 V, VBE = 2 V, IC = 1 A, IB1 = IB2 = 100 mA