2N3737

2N3737 Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N3737J) • JANTX level (2N3737JX) • JANTXV level (2N3737JV) • JANS level (2N3737JS) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS • Radiation testing (total dose) upon request Applications • General purpose • Low power • NPN silicon transistor Features • • • • Hermetically sealed TO-46 metal can Also available in chip configuration Chip geometry 0806 Reference document: MIL-PRF-19500/395 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25°C Derate linearly above 25°C Power Dissipation, TC = 25°C Derate linearly above 25°C Thermal Resistance Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT PT • Qualification Levels: JAN, JANTX, JANTXV and JANS • Radiation testing available TC = 25°C unless otherwise specified RθJA TJ TSTG Rating 40 75 5 1.5 0.5 2.86 1.9 11.3 350 -65 to +200 Unit Volts Volts Volts A W mW/°C W mW/°C °C/W °C Copyright 2002 Rev. G Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N3737 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 VBEsat1 VBEsat2 VBEsat3 VBEsat4 VCEsat1 VCEsat2 VCEsat3 VCEsat4 Test Conditions IC = 10 mA, VCE = 1 Volts IC = 150 mA, VCE = 1 Volts IC = 500 mA, VCE = 1 Volts IC = 1 A, VCE = 1.5 Volts IC = 1.5 A, VCE = 5 Volts IC = 500 mA, VCE = 1 Volts TA = -55°C IC = 10 mA, IB = 1 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 1 A, IB = 100 mA IC = 10 mA, IB = 1 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 1 A, IB = 100 mA Symbol V(BR)CEO ICBO1 ICBO2 ICEX1 ICEX2 IEBO1 IEBO2 Test Conditions IC = 10 mA VCB = 75 Volts VCB = 30 Volts VCE = 30 Volts, VEB = 2 Volts VCE = 30 Volts, VEB = 2 Volts, TA = 150°C VEB = 5 Volts VEB = 4 Volts Min 40 10 250 200 250 10 100 Typ Max Units Volts µA nA nA µA µA nA Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% DC Current Gain Min 35 40 40 20 20 15 Typ Max Units 140 80 Base-Emitter Saturation Voltage 0.9 Collector-Emitter Saturation Voltage 0.8 1.0 1.2 1.4 0.2 0.3 0.5 0.9 Volts Volts Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Open Circuit Input Capacitance Switching Characteristics Delay Time Rise Time Saturated Turn-Off Time td tr tOFF VBE = 2 Volts, IC = 1 A, IB = 100 mA IC = 1 A, IB1=IB2=100 mA 8 40 60 ns ns Symbol |hFE| COBO CIBO Test Conditions VCE = 10 Volts, IC = 50 mA, f = 100 MHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz Min 2.5 Typ Max 6.0 9 80 pF pF Units Copyright 2002 Rev. G Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com