2N3737UB
Silicon NPN Transistor
Data Sheet
Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N3737UBJ) • JANTX level (2N3737UBJX) • JANTXV level (2N3737UBJV) • JANS level (2N3737UBJS) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS • Radiation testing (total dose) upon request
Applications
• General purpose • Low power • NPN silicon transistor
Features
• • • • Hermetically sealed Cersot ceramic Also available in chip configuration Chip geometry 0806 Reference document: MIL-PRF-19500/395
Benefits
Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 • Qualification Levels: JAN, JANTX, JANTXV and JANS • Radiation testing available
TC = 25°C unless otherwise specified
Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25°C Derate linearly above 37.5°C Thermal Resistance Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT
RθJA
TJ TSTG
Rating 40 75 5 1.5 0.5 3.07 325 -65 to +200
Unit Volts Volts Volts A W mW/°C °C/W °C
Copyright 2002 Rev. G
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N3737UB
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 VBEsat1 VBEsat2 VBEsat3 VBEsat4 VCEsat1 VCEsat2 VCEsat3 VCEsat4 Test Conditions IC = 10 mA, VCE = 1 Volts IC = 150 mA, VCE = 1 Volts IC = 500 mA, VCE = 1 Volts IC = 1 A, VCE = 1.5 Volts IC = 1.5 A, VCE = 5 Volts IC = 500 mA, VCE = 1 Volts TA = -55°C IC = 10 mA, IB = 1 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 1 A, IB = 100 mA IC = 10 mA, IB = 1 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 1 A, IB = 100 mA Symbol V(BR)CEO ICBO1 ICBO2 ICEX1 ICEX2 IEBO1 IEBO2 Test Conditions IC = 10 mA VCB = 75 Volts VCB = 30 Volts VCE = 30 Volts, VEB = 2 Volts VCE = 30 Volts, VEB = 2 Volts, TA = 150°C VEB = 5 Volts VEB = 4 Volts Min 40 10 250 200 250 10 100 Typ Max Units Volts µA nA nA µA µA nA
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
DC Current Gain
Min 35 40 40 20 20 15
Typ
Max
Units
140 80
Base-Emitter Saturation Voltage
0.9
Collector-Emitter Saturation Voltage
0.8 1.0 1.2 1.4 0.2 0.3 0.5 0.9
Volts
Volts
Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Open Circuit Input Capacitance Switching Characteristics Delay Time Rise Time Saturated Turn-Off Time td tr tOFF VBE = 2 Volts, IC = 1 A, IB = 100 mA IC = 1 A, IB1=IB2=100 mA 8 40 60 ns ns Symbol |hFE| COBO CIBO Test Conditions VCE = 10 Volts, IC = 50 mA, f = 100 MHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz Min 2.5 Typ Max 6.0 9 80 pF pF Units
Copyright 2002 Rev. G
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
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