2N3810

Data Sheet No. 2N3810 Type 2N3810 Geometry 0220 Polarity PNP Qual Level: JAN - JANS Features: • • • • Two electrically isolated, matched PNP transistors as one dual unit. Housed in TO-78 case. Also available in chip form using the 0220 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/336 which Semicoa meets in all cases. Generic Part Number: 2N3810 REF: MIL-PRF-19500/336 TO-78 Maximum Ratings TC = 25oC unless otherwise specified Rating Collector-Emitter voltage Collector-Base Voltage Emitter-Base voltage Collector Current, Continuous Power Dissipation, TA = 25 C, one section Derate above 25oC Power Dissipation, TA = 25oC, two sections Derate above 25 C Operating Junction Temperature Storage Temperature o o Symbol VCEO VCBO VEBO IC PT Rating 60 60 5.0 50 0.5 2.86 Unit V V V mA W mW/oC W mW/ C o o PT 0.6 3.43 TJ TSTG -65 to +200 -65 to +200 C C o Data Sheet No. 2N3810 Electrical Characteristics TC = 25 C unless otherwise specified o OFF Characteristics Collector-Base Breakdown Voltage IC = 10 µA Collector-Emitter Breakdown Voltage IC = 10 mA Emitter-Base Breakdown Voltage IC = 10 µA Collector-Base Cutoff Current VCB = 50 V Collector-Base Cutoff Current VCB = 50 V, TA = +150 C Collector-Base Cuttoff Current VCE = 50 V, IC = 1 µA o Symbol V(BR)CBO Min 60 Max --- Unit V V(BR)CEO 60 --- V V(BR)EBO 5.0 --- V ICBO1 --- 10 nA ICBO2 --- 10 µA IEBO --- 10 nA ON Characteristics Forward Current Transfer Ratio IC = 1 µA, VCE = 5 V IC = 10 µA, VCE = 5 V IC = 100 µA, VCE = 5 V IC = 500 µA, VCE = 5 V IC = 1 mA, VCE = 5 V IC = 10 mA, VCE = 5 V IC = 100 µA, VCE = 5 V, TA = -55oC Base-Emitter Saturation Voltage IC = 100 µA, IB = 10 µA IC = 1 mA, IB = 100 µA VCE = 5 V, IC = 100 µA Collector-Emitter Saturation Voltage IC = 100 µA, IB = 10 µA IC = 1 mA, IB = 100 µA Symbol Min Max Unit hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 hFE7 75 100 150 150 150 125 60 ----450 450 450 ----- --------------- VBE(sat)1 VBE(sat)2 VBE(sat)3 ------- 0.7 0.8 0.7 V dc V dc V dc VCE(sat)1 VCE(sat)2 ----- 0.2 0.25 V dc V dc Data Sheet No. 2N3810 Small Signal Characteristics Forward Current Transfer Ratio (Gain Ratio) VCE = 5 V, IC = 100 µA Base Emitter Value, Nonsaturated Absolute Value of Differential, |VBE1 - VBE2|1 VCE = 5 V, IC = 10 µA VCE = 5 V, IC = 100 µA VCE = 5 V, IC = 10 mA Magnitude of Small-Signal, Short Circuit Forward Current Transfer Ratio VCE = 5 V, IC = 500 µA, f = 30 MHz VCE = 5 V, IC = 1 mA, f = 100 MHz Small-Signal, Short Circuit Forward Current Transfer Ratio VCE = 10 V, IC = 1.0 mA, f = 1 kHz Small-Signal, Short Circuit Input Impedance VCE = 10 V, IC = 1 mA, f = 1 kHz Small-Signal, Open Circuit Output Admittance VCE = 10 V, IC = 1 mA, f = 1 kHz Small-Signal, Open Circuit Reverse Voltage Transfer Ratio VCE = 10 V, IC = 1 mA, f = 1 kHz Noise Figure VCE = 10 V, IC = 100 µA, R = 3 kO, f = 100 Hz Symbol hFE3-1 / hFE3-2 Min 0.9 Max 1.0 Unit --- ------- 5.0 3.0 5.0 mV mV mV |hFE|1 |hFE|2 hFE 1.0 1.0 --5.0 ----- 150 600 --- hie 3.0 30 kohm hoe 5.0 60 µohm hre --- 25 x 10-4 --- F1 F2 F3 F4 --------- 7.0 3.0 2.5 3.5 dB dB dB dB VCE = 10 V, IC = 100 µA, R = 3 kO, f = 1 kHz VCE = 10 V, IC = 100 µA, R = 3 kO, f = 10 kHz VCE = 10 V, IC = 100 µA, R = 3 kO, noise bandwidth 10 Hz to 15.7 kHz Open Circuit, Output Capacitance VCB = 5 V, IE = 0, 100 kHz < f < 1 MHz Input Capacitance, Output Short Circuited VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz COBO --- 5.0 pF CIBO --- 8.0 pF