Data Sheet No. 2N3866A
Type 2N3866A
Geometry 1007 Polarity NPN Qual Level: JAN - JANS
Features: • General-purpose silicon transistor for switching and amplifier applications. Housed in TO-39 case. Also available in chip form using the 1007 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/398 which Semicoa meets in all cases.
Generic Part Number: 2N3866A
REF: MIL-PRF-19500/398
• • •
TO-39
Maximum Ratings
TC = 25 C unless otherwise specified
o
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Operating Junction Temperature Storage Temperature
Symbol
VCEO VCBO VEBO IC TJ TSTG
Rating
30 60 3.5 0.4 -55 to +175 -55 to +175
Unit
V V V A
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C C
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Data Sheet No. 2N3866A
Electrical Characteristics
TC = 25oC unless otherwise specified
OFF Characteristics
Collector-Base Breakdown Voltage IC = 100 µA, pulsed Collector-Emitter Breakdown Voltage IC = 5 mA, pulsed Collector-Emitter Breakdown Voltage IC = 40 mA, VBE = -5V, clamped Emitter-Base Breakdown Voltage IE = 100 µA, pulsed Collector-Emitter Cutoff Current VCE = 55 V Collector-Emitter Cutoff Current o VCE = 55 V, TA = +150 C Collector-Emitter Cutoff Current VCE = 28 V
Symbol
V(BR)CBO V(BR)CEO V(BR)CEC V(BR)EBO ICES ICES2 ICEO
Min
60 30 55 3.5 -------
Max
--------100 2.0 20
Unit
V V --V µA mA µA
ON Characteristics
Forward Current Transfer Ratio IC = 50 mA, VCE = 5.0 V (pulsed) IC = 360 mA, VCE = 5.0 V (pulsed)
IC = 50 mA, VCE = 5.0 V (pulsed), TA = -55 C
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Symbol
hFE1 hFE2 hFE3 VCE(sat) P1out P2out n1 n2
Min
25 8.0 12 --1.0 0.5 45 40
Max
200 ----1.0 2.0 -------
Unit
------V dc W W % %
Collector-Emitter Saturation Voltage IC = 100 mA, IB = 10 mA (pulsed) Power Output VCC = 28 V, PIN = 0.15 W, f = 400 MHz Power Output VCC = 28 V, PIN = 0.075 W, f = 400 MHz Collector Efficiency VCC = 28 V, PIN = 0.15 W, f = 400 MHz Collector Efficiency VCC = 28 V, PIN = 0.075 W, f = 400 MHz
Small Signal Characteristics
Magnitude of Common Emitter, Small Signal, Short Circuit
Symbol
|hFE| COBO
Min
4.0 ---
Max
7.5 3.5
Unit
--pF
Current Transfer Ratio IC = 50 mA, VCE = 15 V, f = 200 Open Circuit Output Capacitance VCB = 28 V, IE = 0
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