2N3866AUB

2N3866AUB Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N3866AUBJ) • JANTX level (2N3866AUBJX) • JANTXV level (2N3866AUBJV) • JANS level (2N3866AUBJS) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS • Radiation testing (total dose) upon request Applications • General purpose high frequency • VHF-UHF amplifier transistor • NPN silicon transistor Features • • • • Hermetically sealed Cersot ceramic Also available in chip configuration Chip geometry 1008 Reference document: MIL-PRF-19500/398 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 • Qualification Levels: JAN, JANTX, JANTXV and JANS • Radiation testing available TC = 25°C unless otherwise specified Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25°C Derate linearly above 25°C Thermal Resistance Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT Rating 30 60 3.5 400 0.5 2.86 325 -65 to +200 Unit Volts Volts Volts mA W mW/°C °C/W °C RθJA TJ TSTG Copyright 2002 Rev. F Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N3866AUB Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEO ICES1 ICES2 Test Conditions IC = 100 µA IC = 5 mA IE = 100 µA VCE = 28 Volts VCE = 55 Volts VCE = 55 Volts, TA = 150°C Min 60 30 3.5 20 100 2 Typ Max Units Volts Volts Volts µA µA mA On Characteristics Parameter DC Current Gain Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Collector Efficiency Power Output Symbol |hFE| COBO η1 η2 P1out P1out Test Conditions VCE = 15 Volts, IC = 50 mA, f = 200 MHz VCB = 28 Volts, IE = 0 mA, Symbol hFE1 hFE2 hFE3 VCEsat1 Test Conditions IC = 50 mA, VCE = 5 Volts IC = 360 mA, VCE = 5 Volts IC = 50 mA, VCE = 5 Volts TA = -55°C IC = 100 mA, IB = 10 mA Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Min 25 8 12 Typ Max 200 Units 1 Volts Min 4 Typ Max 7.5 3.5 Units pF % VCC = 28 Volts, f = 400 MHz Pin = 0.15 W Pin = 0.075 W VCC = 28 Volts, f = 400 MHz Pin = 0.15 W Pin = 0.075 W 45 40 1.0 0.5 2 Watts Copyright 2002 Rev. F Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com