2N3960

Data Sheet No. 2N3960 Type 2N3960 Geometry 0003 Polarity NPN Qual Level: JAN - JANTXV Features: • • • • General-purpose low-power NPN silicon transistor. Housed in TO-18 case. Also available in chip form using the 0003 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/399 which Semicoa meets in all cases. Generic Part Number: 2N3960 REF: MIL-PRF-19500/399 TO-18 Maximum Ratings TC = 25oC unless otherwise specified Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Power Dissipation, TA = 25 C Derate above 25oC Operating Junction Temperature Storage Temperature o Symbol VCEO VCBO VEBO PT Rating 12 20 4.5 400 2.3 Unit V V V mW mW/oC o TJ TSTG -65 to +200 -65 to +200 C C o Data Sheet No. 2N3960 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Collector-Base Breakdown Voltage IC = 10 µA Collector-Emitter Breakdown Voltage IC = 10 mA Emitter-Base Breakdown Voltage IC = 10 µA Collector-Emitter Cutoff Current VCE = 10 V, VBE = 0.4 V VCE = 10 V, VEB = 2.0 V VCE = 10 V, VEB = 2.0 V, TA = 150 C o Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX1 ICEX2 ICEX3 Min 20 12 4.5 ------- Max ------1.0 5.0 5.0 Unit V V V µA nA µA ON Characteristics Forward Current Transfer Ratio IC = 1.0 mA, VCE = 1 V IC = 10 mA, VCE = 1 V, pulsed IC = 30 mA, VCE = 1 V, pulsed IC = 10 mA, VCE = 1.0 V, TC = -55oC Base-Emitter Saturation Voltage VCE 1.0 V, IC = 1.0 mA VCE 1.0 V, IC = 30 mA Collector-Emitter Saturation Voltage IC = 1.0 mA, IB = 0.1 mA IC = 30 mA, IB = 3.0 mA Symbol hFE1 hFE2 hFE3 hFE4 VBE1 VBE2 VCE(sat)1 VCE(sat)2 Min 40 60 30 30 --------- Max --300 ----0.8 1.0 0.2 0.3 Unit ------- V dc V dc V dc V dc Small Signal Characteristics Magnitude of Common Emitter, Small Signal, Short Circuit Symbol |hFE1| |hFE2| |hFE3| COBO CIBO Min 13 14 12 ----- Max ------2.5 2.5 Unit ------pF pF Forward Current Transfer Ratio VCE = 4 V, IC = 5.0 mA, f = 100 MHz VCE = 4 V, IC = 10 mA, f = 100 MHz VCE = 4 V, IC = 30 mA, f = 100 MHz Open Circuit Output Capacitance VCB = 4 V, IE = 0, 100 kHz < f < 1 MHz Input Capacitance, Output Open Circuited VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz