2N3960UB

2N3960UB Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N3960UBJ) • JANTX level (2N3960UBJX) • JANTXV level (2N3960UBJV) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV • Radiation testing (total dose) upon request Applications • General purpose • Low power switching transistor • NPN silicon transistor Features • • • • Hermetically sealed Cersot ceramic Also available in chip configuration Chip geometry 0003 Reference document: MIL-PRF-19500/399 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 • Qualification Levels: JAN, JANTX, and JANTXV • Radiation testing available Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Power Dissipation, TA = 25°C Derate linearly above 25°C Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO PT TJ TSTG TC = 25°C unless otherwise specified Rating 12 20 4.5 400 2.3 -65 to +200 -65 to +200 Unit Volts Volts Volts mW mW/°C °C °C Copyright 2002 Rev. D Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N3960UB Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 VBE1 VBE2 VCEsat1 VCEsat2 Symbol |hFE|1 |hFE|2 |hFE|3 COBO CIBO Test Conditions IC = 1 mA, VCE = 1 Volts IC = 10 mA, VCE = 1 Volts IC = 30 mA, VCE = 1 Volts IC = 10 mA, VCE = 1 Volts TA = -55°C VCE = 1 Volts, IC = 1 mA VCE = 1 Volts, IC = 30 mA IC = 1 mA, IB = 0.1 mA IC = 30 mA, IB = 3 mA Test Conditions f = 100 MHz VCE = 4 Volts, IC = 5 mA, VCE = 4 Volts, IC = 10 mA, VCE = 4 Volts, IC = 30 mA, VCB = 4 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz Symbol V(BR)CEO ICBO ICEX1 ICEX2 ICEX3 IEBO Test Conditions IC = 10 µA VCB = 20 Volts VCE = 10Volts, VBE = 0.4Volts VCE = 10Volts, VBE = 2 Volts VCE = 10Volts, VBE = 2 Volts, TA = 150°C VEB = 4.5 Volts Min 12 10 1 5 5 10 Typ Max Units Volts µA µA nA µA µA Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% DC Current Gain Min 40 60 30 30 Typ Max 300 Units Base-Emitter Voltage Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Open Circuit Input Capacitance 0.8 1.0 0.2 0.3 Min 13 14 12 2.5 2.5 Typ Max Volts Volts Units pF pF Copyright 2002 Rev. D Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com