2N3999

2N3999 Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N3999J) • JANTX level (2N3999JX) • JANTXV level (2N3999JV) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV • Radiation testing (total dose) upon request Applications • High-speed power switching • Power transistor • NPN silicon transistor Features • • • • Hermetically sealed TO-x metal can Also available in chip configuration Chip geometry 9201 Reference document: MIL-PRF-19500/374 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 • Qualification Levels: JAN, JANTX, and JANTXV • Radiation testing available Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25°C Derate linearly above 25°C Power Dissipation, TC = 25°C Derate linearly above 25°C Thermal Resistance Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT PT TC = 25°C unless otherwise specified Rating 80 100 8 5 2 11.4 30 300 3.33 -65 to +200 -65 to +200 Unit Volts Volts Volts A W mW/°C W mW/°C °C/W °C °C RθJC TJ TSTG Copyright 2002 Rev. D Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N3999 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 VBEsat1 VBEsat2 VCEsat1 VCEsat2 Symbol |hFE| COBO Test Conditions IC = 50 mA, VCE = 2 Volts IC = 1 A, VCE = 2 Volts IC = 5 A, VCE = 5 Volts IC = 1 A, VCE = 2 Volts TA = -55°C IC = 1 A, IB = 100 mA IC = 5 A, IB = 500 mA IC = 1 A, IB = 100 mA IC = 5 A, IB = 500 mA Test Conditions VCE = 5 Volts, IC = 1 A, f = 10 MHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz Test Conditions Symbol V(BR)CBO V(BR)CEO ICEO ICES1 ICES1 IEBO1 IEBO2 Test Conditions IC = 10 µA IC = 50 mA VCE = 60 Volts VCE = 80 Volts VCE = 80 Volts, TA = 150°C VEB = 5 Volts VEB = 8 Volts Min 100 80 10 200 50 200 10 Typ Max Units Volts Volts µA nA µA nA µA Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% DC Current Gain Min 60 80 20 20 0.6 Typ Max 240 Units Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Switching Characteristics Parameter Delay Time Rise Time Storage Time Fall Time Saturated Turn-On Time Saturated Turn-Off Time 1.2 1.6 0.25 2 Typ Max 12 150 Volts Volts Min 3 Units pF Symbol td tr ts tf tON tOFF Min Typ Max 100 240 1.75 300 300 2.0 Units ns ns µs ns ns µs Copyright 2002 Rev. D Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com