2N4033

2N4033 Silicon PNP Transistor Data Sheet Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N4033J) • JANTX level (2N4033JX) and • JANTXV level (2N4033JV) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV • Radiation testing (total dose) upon request Applications • High-speed switching • Low Power • PNP silicon transistor Features • • • • Hermetically sealed TO-39 metal can Also available in chip configuration Chip geometry 6700 Reference document: MIL-PRF-19500/512 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 • Qualification Levels: JAN, JANTX, and JANTXV • Radiation testing available TC = 25°C unless otherwise specified Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25°C Derate linearly above 60°C Thermal Resistance Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT Rating 80 80 5 1 0.8 5.7 175 -65 to +200 -65 to +200 Unit Volts Volts Volts A W mW/°C °C/W °C °C RθJA TJ TSTG Copyright 2002 Rev. E Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N4033 Silicon PNP Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 VBEsat1 VBEsat2 VCEsat1 VCEsat2 VCEsat3 Test Conditions IC = 100 µA, VCE = 5 Volts IC = 100 mA, VCE = 5 Volts IC = 500 mA, VCE = 5 Volts IC = 1 A, VCE = 5 Volts IC = 500 mA, VCE = 5 Volts TA = -55°C IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 1 A, IB = 100 mA Symbol ICBO1 ICBO2 ICBO3 ICEX IEBO1 IEBO2 Test Conditions VCB = 80 Volts VCB = 60 Volts VCB = 60 Volts, TA = 150°C VCE = 60 Volts, VEB = 2 Volts VBE = 5 Volts VBE = 3 Volts Min Typ Max 10 10 25 25 10 25 Units µA nA µA nA µA nA Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% DC Current Gain Min 50 100 70 25 30 Typ Max 300 Units Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Open Circuit Input Capacitance Switching Characteristics Delay Time Rise Time Storage Time Fall Time 0.9 1.2 0.15 0.50 1.00 Volts Volts Symbol |hFE| COBO CIBO td tr ts tf Test Conditions VCE = 10 Volts, IC = 50 mA, f = 100 MHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz Min 1.5 Typ Max 6.0 20 80 Units pF pF IC = 500 mA, IB = 50 mA IC = 500 mA, IB = 50 mA 15 25 175 35 ns ns Copyright 2002 Rev. E Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com