2N4261UB

2N4261UB Silicon PNP Transistor Data Sheet Description SEMICOA offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N4261UBJ) • JANTX level (2N4261UBJX) • JANTXV level (2N4261UBJV) • JANS level (2N4261UBJS) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS • Radiation testing (total dose) upon request Applications • General purpose switching transistor • Low power • PNP silicon transistor Features • • • • Hermetically sealed Cersot ceramic Also available in chip configuration Chip geometry 0014 Reference document: MIL-PRF-19500/511 Benefits Please contact SEMICOA for special configurations www.SEMICOA.com or (714) 979-1900 • Qualification Levels: JAN, JANTX, JANTXV and JANS • Radiation testing available TC = 25°C unless otherwise specified Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25°C Derate linearly above 25°C Thermal Resistance Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT Rating 15 15 4.5 30 200 1.14 0.86 -65 to +200 Unit Volts Volts Volts mA mW mW/°C °C/mW °C RθJA TJ TSTG Copyright© 2005 Rev. E SEMICOA 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N4261UB Silicon PNP Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Emitter-Base Cutoff Current Symbol V(BR)CEO ICBO ICEX1 ICEX2 ICEX3 IEBX IEBO Test Conditions IC = 10 mA VCB = 15 Volts VCE = 10Volts, VBE = 0.4Volts VCE = 10 Volts, VBE = 2 Volts VCE = 10 Volts, VBE = 2 Volts, TA = 150°C VBE = 2 Volts, VCE = 10 Volts VEB = 4.5 Volts Min 15 10 50 5 5 5 10 Typ Max Units Volts µA nA nA µA nA µA On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 VBE1 VBE2 VCEsat1 VCEsat2 Test Conditions IC = 1 mA, VCE = 1 Volts IC = 10 mA, VCE = 1 Volts IC = 30 mA, VCE = 1 Volts IC = 10 mA, VCE = 1 Volts TA = -55°C VCE = 1 Volts, IC = 1 mA VCE = 1 Volts, IC = 10 mA IC = 1 mA, IB = 0.1 mA IC = 10 mA, IB = 1 mA Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% DC Current Gain Min 25 30 20 15 Typ Max 150 Units Base-Emitter Voltage Collector-Emitter Saturation Voltage 0.8 1.0 0.15 0.35 Volts Volts Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Open Circuit Input Capacitance Collector Base time constant Symbol |hFE1| |hFE2| COBO CIBO rb’CC1 rb’CC2 tON tOFF Test Conditions f = 100 MHz VCE = 4 Volts, IC = 5 mA VCE = 10 Volts, IC = 10 mA VCB = 4 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz VCE = 4 Volts, f = 31.8 MHz IC = 5 mA IC = 10 mA VCC = 17 Volts, IC = 10 mA VCC = 17 Volts, IC = 10 mA Min 15 20 2.5 2.5 60 50 pF pF ps Typ Max Units Switching Characteristics Saturated Turn-On Time Saturated Turn-Off Time 2.5 3.5 ns ns Copyright© 2005 Rev. E SEMICOA 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com