Data Sheet No. 2N4957
Type 2N4957
Geometry 0006 Polarity PNP Qual Level: JAN - JANS
Features: • • • • Small signal RF silicon transistor designed for high-gain, low-noise applications. Housed in a TO-72 case. Also available in chip form using the 0006 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/426 which Semicoa meets in all cases.
Generic Part Number: 2N4957
REF: MIL-PRF-19500/426
TO-72
Maximum Ratings
TC = 25 C unless otherwise specified
o
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Operating Junction Temperature Storage Temperature
Symbol
VCEO VCBO VEBO IC TJ TSTG
Rating
30 30 3.0 30 -65 to +200 -65 to +200
Unit
V V V A
o
C C
o
Data Sheet No. 2N4957
Electrical Characteristics
TC = 25 C unless otherwise specified
o
OFF Characteristics
Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 Emitter-Base Breakdown Voltage IE = 100 µA, IC = 0 Collector-Base Cutoff Current o VCB = 20 V, IE 0, TC = +25 C Collector-Base Cutoff Current VCB = 20 V, IE 0, TC = +150oC
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO1 ICBO2
Min
30 30 3.0 -----
Max
------100 100
Unit
V V V na µA
ON Characteristics
DC Current Gain IC = 0.5 mA, VCE = 10 V IC = 2.0 mA, VCE = 10 V IC = 5.0 mA, VCE = 10 V o IC = 5.0 mA, VCE = 10 V, TA = -55 C
Symbol
hFE1 hFE2 hFE3 hFE4
Min
15 20 30 10
Max
----165 ---
Unit
---------
Small Signal Characteristics
Magnitude of Common Emitter Small Signal Short Circuit Forward Current Transfer Ratio VCE = 10 V, IE = 2.0 mA, f = 100 MHz Collector to Base Feedback Capacitance VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz Collector to Base Time Constant VCB = 10 V, IE = 2.0 mA, f = 63.6 MHz Common Emitter Small Signal Power Gain VCE = 10 V, IC = 2.0 mA, f = 450 MHz
Symbol
|hfe| Ccb rb'CC GPE
Min
12 --1.0 17
Max
36 0.8 8.0 25
Unit
--pF ps dB
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