2N5039

2N5039 Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N5039J) • JANTX level (2N5039JX) • JANTXV level (2N5039JV) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV • Radiation testing (total dose) upon request Applications • High-speed power-switching • High power • NPN silicon transistor Features • • • • Hermetically sealed TO-3 metal can Also available in chip configuration Chip geometry 9351 Reference document: MIL-PRF-19500/439 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 • Qualification Levels: JAN, JANTX, and JANTXV • Radiation testing available TC = 25°C unless otherwise specified Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25°C Derate linearly above 25°C Thermal Resistance Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT Rating 75 125 7 20 140 800 1.25 -65 to +200 -65 to +200 Unit Volts Volts Volts A W mW/°C °C/W °C °C RθJA TJ TSTG Copyright 2002 Rev. E Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N5039 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 VBE VBEsat VCEsat1 VCEsat2 Test Conditions IC = 0.5 A, VCE = 5 Volts IC = 2 A, VCE = 5 Volts IC = 10 A, VCE = 5 Volts IC = 10 A, VCE = 5 Volts TA = -55°C VCE = 5 Volts, IC = 10 A IC = 20 A, IB = 5 A IC = 10 A, IB = 1 A IC = 20 A, IB = 5 A Symbol V(BR)CEO V(BR)EBO ICBO1 ICEO ICEX1 ICEX2 IEBO Test Conditions IC = 200 mA IE = 25 mA VCB = 125 Volts VCE = 55 Volts VCE =85Volts, VEB =1.5Volts VCE =85Volts, VEB=1.5Volts, TA = 150°C VEB = 5 Volts Min 75 7 1 1 5 100 1 Typ Max Units Volts Volts µA µA µA µA Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% DC Current Gain Min 30 30 15 10 Typ Max 150 Units Base-Emitter Voltage Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Switching Characteristics Saturated Turn-On Time Saturated Turn-Off Time 1.8 3.3 1.0 2.5 Volts Volts Volts Symbol |hFE| COBO Test Conditions VCE = 10 Volts, IC = 2 A, f = 5 MHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz IC = 10 A, IB1 = 1.0 A IC = 10 A, IB1 = -IB2 = 1.0 A Min 12 Typ Max 48 500 Units pF tON tOFF 0.5 2.0 µs µs Copyright 2002 Rev. E Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com