0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
2N5109

2N5109

  • 厂商:

    SEMICOA

  • 封装:

  • 描述:

    2N5109 - Type 2N5109 Geometry 1007 Polarity NPN - Semicoa Semiconductor

  • 数据手册
  • 价格&库存
2N5109 数据手册
Data Sheet No. 2N5109 Type 2N5109 Geometry 1007 Polarity NPN Qual Level: JAN - JANTXV Features: • • • • VHF-UHF amplifier silicon transistor. Housed in TO-39 case. Also available in chip form using the 1007 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/398 which Semicoa meets in all cases. Generic Part Number: 2N5109 REF: MIL-PRF-19500/453 TO-39 Maximum Ratings TC = 25oC unless otherwise specified Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation at 25oC ambient Derate above 25oC Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT Rating 20 40 3.0 0.4 1.0 5.71 -65 to +200 -65 to +200 Unit V V V A W mW/oC o TJ TSTG C C o Data Sheet No. 2N5109 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Collector-Base Breakdown Voltage IC = 100 µA Collector-Emitter Breakdown Voltage IC = 5 mA Collector-Emitter Breakdown Voltage IC = 5 mA, R2 = 10 ohms Emitter-Base Breakdown Voltage IE = 100 µA Collector-Emitter Cutoff Current VCE = 15 V Collector-Emitter Cutoff Current o VCE = 15 V, TC = +175 C Symbol V(BR)CBO V(BR)CEO V(BR)CER V(BR)EBO ICEO1 ICEO2 Min 40 20 40 3.0 ----- Max --------20 5.0 Unit V V V V µA mA ON Characteristics Forward Current Transfer Ratio IC = 50 mA, VCE = 15 V (pulsed) IC = 50 mA, VCE = 5.0 V (pulsed) Collector-Emitter Saturation Voltage IC = 100 mA, IB = 50 mA (pulsed) Symbol hFE1 hFE2 VCE(sat)1 Min 40 15 --- Max 150 --0.5 Unit ----V dc Small Signal Characteristics Magnitude of Common Emitter, Small Signal, Short Circuit Symbol Min 5.0 6.0 5.0 --11 ----11 Max 10 11 10.5 3.5 3.5 -57 3.5 --- Unit ------pF dB dB dB dB Current Transfer Ratio IC = 25 mA, VCE = 15 V, f = 200 MHz IC = 25 mA, VCE = 15 V, f = 200 MHz IC = 25 mA, VCE = 15 V, f = 200 MHz Open Circuit Output Capacitance VCB = 28 V, IE = 0, 100 kHz < f < 1 MHz Power Gain (Narrow Band) Current VCC = 15 V, IC = 50 mA, f = 200 MHz Cross Modulation VCC = 15 V, IC = 50 mA, f = 200 MHz 54 dBm V outpuot Noise Figure VCC = 15 V, IC = 50 mA, f = 200 MHz Voltage Gain (Wideband) VCC = 15 V, IC = 50 mA, f = 50 to 216 MHz |hFE| COBO GPE cm NF GVE
2N5109 价格&库存

很抱歉,暂时无法提供与“2N5109”相匹配的价格&库存,您可以联系我们找货

免费人工找货