2N5109UB

2N5109UB Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N5109UBJ) • JANTX level (2N5109UBJX) • JANTXV level (2N5109UBJV) • JANS level (2N5109UBJS) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS • Radiation testing (total dose) upon request Applications • General purpose • VHF-UHF amplifier transistor • NPN silicon transistor Features • • • • Hermetically sealed Cersot ceramic Also available in chip configuration Chip geometry 1009 Reference document: MIL-PRF-19500/453 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25°C Derate linearly above 25°C Power Dissipation, TC = 25°C Derate linearly above 25°C Thermal Resistance Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT PT • Qualification Levels: JAN, JANTX, JANTXV and JANS • Radiation testing available TC = 25°C unless otherwise specified Rating 20 40 3 400 1 5.71 2.9 16.6 175 -65 to +200 -65 to +200 Unit Volts Volts Volts mA W mW/°C W mW/°C °C/W °C °C RθJA TJ TSTG Copyright 2002 Rev. D Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N5109UB Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Cutoff Current On Characteristics Parameter DC Current Gain Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Power Gain (narrow band) current Cross Modulation Noise Figure Voltage Gain (wideband) Symbol |hFE1| |hFE2| |hFE3| COBO GPE cm NF G Test Conditions VCE = 15 Volts, f = 200 MHz, IC = 25 mA IC = 50 mA IC = 100 mA VCB = 5 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VCC = 15 Volts, IC = 50 mA, f = 200 MHz, Pin = -10 dB VCC = 15 Volts, IC = 50 mA, 54 dB output VCC = 15 Volts, IC = 10 mA, f = 200 MHz, Pin = -10 dB VCC = 15 Volts, IC = 50 mA, 50 MHz < f < 216 MHz, Pin = -10dB Min 5 6 5 Typ Max 10.0 11.0 10.5 3.5 11 -57 3.5 11 pF dB dB dB dB Units Symbol hFE1 hFE2 VCEsat Test Conditions IC = 50 mA, VCE = 15 Volts IC = 50 mA, VCE = 5 Volts TA = -55°C IC = 100 mA, IB = 10 mA Symbol V(BR)CBO V(BR)CEO V(BR)CER V(BR)EBO ICEO1 ICEO2 Test Conditions IC = 100 µA IC = 5 mA IC = 5 mA, RBE = 10 Ω IE = 100 µA VCE = 15 Volts VCE = 15 Volts, TA = 175°C Min 40 20 40 3 20 5 Typ Max Units Volts Volts Volts Volts µA mA Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Min 40 15 Typ Max 150 Units 0.5 Volts Copyright 2002 Rev. D Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com