2N5151_02

2N5151 Silicon PNP Transistor Data Sheet Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N5151J) • JANTX level (2N5151JX) • JANTXV level (2N5151JV) • JANS level (2N5151JS) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS • Radiation testing (total dose) upon request Applications • High-speed power switching • Low power • PNP silicon transistor Features • • • • Hermetically sealed TO-39 metal can Also available in chip configuration Chip geometry 9702 Reference document: MIL-PRF-19500/545 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 • Qualification Levels: JAN, JANTX, JANTXV and JANS • Radiation testing available TC = 25°C unless otherwise specified Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25 C Derate linearly above 25OC Power Dissipation, TC = 25OC Derate linearly above 25OC Thermal Resistance Operating Junction Temperature Storage Temperature O Symbol VCEO VCBO VEBO IC PT PT Rating 80 100 5.5 2 1 5.7 11.8 66.7 175 15 -65 to +200 Unit Volts Volts Volts A W mW/°C W mW/°C °C/W °C RθJA RθJC TJ TSTG Copyright 2002 Rev. D Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N5151 Silicon PNP Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Emitter-Base Cutoff Current On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 VBE VBEsat1 VBEsat2 VCEsat1 VCEsat2 Symbol |hFE| hFE COBO Test Conditions IC = 50 mA, VCE = 5 Volts IC = 2.5 A, VCE = 5 Volts IC = 5 A, VCE = 5 Volts IC = 2.5 A, VCE = 5 Volts TA = -55°C VCE = 5 Volts, IC = 2.5 mA IC = 2.5 A, IB = 250 mA IC = 5 A, IB = 500 mA IC = 2.5 A, IB = 250 mA IC = 5 A, IB = 500 mA Test Conditions VCE = 5 Volts, IC = 500 mA, f = 10 MHz VCE = 5 Volts, IC = 100 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, f = 1 MHz Symbol V(BR)CEO ICES1 ICES2 ICEO ICEX IEBO1 IEBO1 Test Conditions IC = 100 mA VCE = 60 Volts VCE = 100 Volts VCE = 40 Volts VCE = 60 Volts, VEB = 2 Volts, TA = 150°C VEB = 4 Volts VEB = 5.5 Volts Min 80 1 1 50 500 1 1 Typ Max Units Volts µA mA µA nA µA mA Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% DC Current Gain Min 20 30 20 15 Typ Max 90 Units Base-Emitter Voltage Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Switching Characteristics Saturated Turn-On Time Storage Time Fall Time Saturated Turn-Off Time 1.45 1.45 2.20 0.75 1.50 Volts Volts Volts Min 6 20 Typ Max Units 250 pF tON ts tf tOFF IC = 5 A, IB1= 500 mA, IB2= -500 mA, VBEoff = 3.7 V, RL = 6 Ω 0.5 1.4 0.5 1.5 µs µs µs µs Copyright 2002 Rev. D Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com