2N5339_02

2N5339 Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N5339J) • JANTX level (2N5339JX) • JANTXV level (2N5339JV) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV • Radiation testing (total dose) upon request Applications • General purpose switching transistor • Low power • NPN silicon transistor Features • • • • Hermetically sealed TO-39 metal can Also available in chip configuration Chip geometry 9201 Reference document: MIL-PRF-19500/560 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 • Qualification Levels: JAN, JANTX, and JANTXV • Radiation testing available TC = 25°C unless otherwise specified Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25°C Derate linearly above 25°C Thermal Resistance Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT Rating 100 100 6 5 1 5.71 17.5 -65 to +200 Unit Volts Volts Volts A W mW/°C °C/W °C RθJC TJ TSTG Copyright 2002 Rev. E Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N5339 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 VBEsat1 VBEsat2 VCEsat1 VCEsat2 Test Conditions IC = 0.5 A, VCE = 2 Volts IC = 2 A, VCE = 2 Volts IC = 5 A, VCE = 2 Volts IC = 2 A, VCE = 2 Volts TA = -55°C IC = 2 A, IB = 200 mA IC = 5 A, IB = 500 mA IC = 2 A, IB = 200 mA IC = 5 A, IB = 500 mA Symbol V(BR)CEO ICBO ICEO ICEX1 ICEX2 IEBO Test Conditions IC = 50 mA VCB = 100 Volts VCE = 100 Volts VCE = 90Volts, VBE = 1.5Volts VCE =90Volts, VBE = 1.5Volts, TA = 150°C VEB = 6 Volts Min 100 10 100 10 10 100 Typ Max Units Volts µA µA µA mA µA Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% DC Current Gain Min 60 60 40 12 Typ Max 240 Units Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Open Circuit Input Capacitance Switching Characteristics Delay Time Rise Time Storage Time Fall Time 1.2 1.8 0.7 1.2 Volts Volts Symbol |hFE| COBO CIBO td tr ts tf Test Conditions VCE = 10 Volts, IC = 500 mA, f = 10 MHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 2 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz Min 3 Typ Max 15 250 1,000 Units pF pF IC = 2 A, IB1 = 200 mA IC = 2 mA, IB1=IB2 = 200 mA 100 100 2 200 ns µs ns Copyright 2002 Rev. E Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com