2N5663

2N5663 Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N5663J) • JANTX level (2N5663JX) • JANTXV level (2N5663JV) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV • Radiation testing (total dose) upon request Applications • General purpose • Power Transistor • NPN silicon transistor Features • • • • Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Hermetically sealed TO-5 metal can Also available in chip configuration Chip geometry 1031 Reference document: MIL-PRF-19500/454 Benefits • Qualification Levels: JAN, JANTX, and JANTXV • Radiation testing available TC = 25°C unless otherwise specified Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25°C Derate linearly above 25°C Power Dissipation, TC = 25°C Derate linearly above 100°C Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT PT TJ TSTG Rating 300 400 6 2 1 5.7 15 150 -65 to +200 Unit Volts Volts Volts A W mW/°C W mW/°C °C Copyright 2002 Rev. D Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N5663 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 VBEsat1 VBEsat2 VCEsat1 VCEsat2 Test Conditions IC = 50 mA, VCE = 2 Volts IC = 500 mA, VCE = 5 Volts IC = 1 A, VCE = 5 Volts IC = 2 A, VCE = 5 Volts IC = 500 mA, VCE = 5 Volts TA = -55°C IC = 1 A, IB = 100 mA IC = 2 A, IB = 400 mA IC = 1 A, IB = 100 mA IC = 2 A, IB = 400 mA Symbol V(BR)CEO V(BR)CER V(BR)EBO ICBO1 ICBO2 ICES1 ICES2 Test Conditions IC = 10 mA IC = 10 mA, RBE = 100 Ω IE = 10 µA VCB = 300 Volts VCB = 400 Volts VCE = 300 Volts VCE = 300 Volts, TA = 150°C Min 300 400 6 0.1 1.0 0.2 100 Typ Max Units Volts Volts Volts µA mA µA Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% DC Current Gain Min 25 25 15 5 10 Typ Max 75 Units Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Switching Characteristics Parameter Saturated Turn-On Time Saturated Turn-Off Time 1.2 1.5 0.4 0.8 Volts Volts Symbol |hFE| COBO Test Conditions VCE = 5 Volts, IC = 100 mA, f = 10 MHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz Min 2 Typ Max 7 45 Units pF Symbol tON tOFF Test Conditions IC = 500 mA, VCC = 100 Volts IC = 500 mA, VCC = 100 Volts Min Typ Max 250 1200 Units ns ns Copyright 2002 Rev. D Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com