2N5664

2N5664 Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N5664J) • JANTX level (2N5664JX) • JANTXV level (2N5664JV) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV • Radiation testing (total dose) upon request Applications • General purpose high power switching • Power Transistor • NPN silicon transistor Features • • • • Hermetically sealed TO-66 metal can Also available in chip configuration Chip geometry 9221 Reference document: MIL-PRF-19500/455 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25°C Derate linearly above 25°C Power Dissipation, TC = 25°C Derate linearly above 100°C Thermal Resistance Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT PT • Qualification Levels: JAN, JANTX, and JANTXV • Radiation testing available TC = 25°C unless otherwise specified Rating 200 250 6 5 2.5 14.3 30 300 3.3 -65 to +200 Unit Volts Volts Volts A W mW/°C W mW/°C °C/W °C RθJA TJ TSTG Copyright 2002 Rev. D Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N5664 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 VBEsat1 VBEsat2 VCEsat1 VCEsat2 Symbol |hFE| COBO Test Conditions IC = 0.5 A, VCE = 2 Volts IC = 1 A, VCE = 5 Volts IC = 3 A, VCE = 5 Volts IC = 5 A, VCE = 5 Volts IC = 1 A, VCE = 5 Volts TA = -55°C IC = 3 A, IB = 300 mA I C = 5 A, I B = 1 A IC = 3 A, IB = 300 mA I C = 5 A, I B = 1 A Test Conditions VCE = 5 Volts, IC = 500 mA, f = 10 MHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz Symbol V(BR)CER V(BR)EBO ICBO1 ICES1 ICES1 Test Conditions IC = 10 µA, RBE = 100 Ω IE = 10 µA VCB = 200 Volts VCE = 200 Volts VCE = 200 Volts, TA = 150°C Min 250 6 100 200 100 Typ Max Units Volts Volts nA nA µA Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% DC Current Gain Min 40 40 15 5 15 Typ Max 120 Units Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Switching Characteristics Parameter Turn-On Time Turn-Off Time 1.2 1.5 0.4 1.0 Volts Volts Min 2 Typ Max 7 120 Units pF Symbol tON tOFF Test Conditions IC = 1 A, VCC = 100 Volts IC = 1 A, VCC = 100 Volts Min Typ Max 0.25 1.5 Units µs µs Copyright 2002 Rev. D Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com