2N6988
Silicon PNP Transistor
Data Sheet
Description Complement to the 2N6990
Applications
• General purpose switching • 4 Transistor Array • PNP silicon transistor
Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N6988J) • JANTX level (2N6988JX) • JANTXV level (2N6988JV) • JANS level (2N6988JS) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS • Radiation testing (total dose) upon request Features
• • • • Hermetically sealed 14 Lead Flat Pack Also available in chip configuration Chip geometry 0600 Reference document: MIL-PRF-19500/558
Benefits
Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 • Qualification Levels: JAN, JANTX, JANTXV and JANS • Radiation testing available
TC = 25°C unless otherwise specified
Absolute Maximum Ratings
Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25OC Derate linearly above 25OC Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT TJ TSTG
Rating 60 60 5 600 0.4 2.286 -65 to +200 -65 to +200
Unit Volts Volts Volts mA W mW/°C °C °C
Copyright© 2003 Rev. D.2
Semicoa
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N6988
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Base Cutoff Current Emitter-Base Cutoff Current Symbol V(BR)CEO ICBO1 ICBO2 ICBO3 IEBO1 IEBO2 Test Conditions IC = 10 mA VCB = 60 Volts VCB = 50 Volts VCB = 50 Volts, TA = 150°C VEB = 5 Volts VEB = 4 Volts Min 60 10 10 10 10 50 Typ Max Units Volts µA nA µA µA nA
On Characteristics
Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 VBEsat1 VBEsat2 VCEsat1 VCEsat2 Test Conditions IC = 0.1 mA, VCE = 10 Volts IC = 1.0 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts IC = 150 mA, VCE = 10 Volts IC = 500 mA, VCE = 10 Volts IC = 1.0 mA, VCE = 10 Volts TA = -55°C IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA
Pulse Test: Pulse Width = 300 µs, Duty Cycle
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