2N6990

2N6990 Silicon NPN Transistor Data Sheet Description Complement to the 2N6988 Applications • General purpose switching • 4 Transistor Array • NPN silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N6990J) • JANTX level (2N6990JX) • JANTXV level (2N6990JV) • JANS level (2N6990JS) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS • Radiation testing (total dose) upon request Features • • • • Hermetically sealed 14 Lead Flat Pack Also available in chip configuration Chip geometry 0400 Reference document: MIL-PRF-19500/559 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 • Qualification Levels: JAN, JANTX, JANTXV and JANS • Radiation testing available Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25 C Derate linearly above 25OC Operating Junction Temperature Storage Temperature O TC = 25°C unless otherwise specified Symbol VCEO VCBO VEBO IC PT TJ TSTG Rating 50 75 6 800 1.0 5.71 -65 to +200 -65 to +200 Unit Volts Volts Volts mA W mW/°C °C °C Copyright© 2003 Rev. D.2 Semicoa 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N6990 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Base Cutoff Current Emitter-Base Cutoff Current Symbol V(BR)CEO ICBO1 ICBO2 ICBO3 IEBO1 IEBO2 Test Conditions IC = 10 mA VCB = 75 Volts VCB = 60 Volts VCB = 60 Volts, TA = 150°C VEB = 6 Volts VEB = 4 Volts Min 50 10 10 10 10 50 Typ Max Units Volts µA nA µA µA nA On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 VBEsat1 VBEsat2 VCEsat1 VCEsat2 Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Test Conditions IC = 0.1 mA, VCE = 10 Volts IC = 1.0 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts IC = 150 mA, VCE = 10 Volts IC = 500 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts TA = -55°C IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Min 50 75 100 100 30 35 0.6 Typ Max 325 300 Units 1.2 2.0 0.3 1.0 Volts Volts Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Open Circuit Input Capacitance Transistor to Transistor Resistance Symbol |hFE| hFE COBO CIBO |RT-T| Test Conditions VCE = 20 Volts, IC = 20 mA, f = 100 MHz VCE = 10 Volts, IC = 1 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 2 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz |VT-T| = 500 Volts Min 2.5 50 8 25 1010 pF pF Ω Typ Max 10 Units Switching Characteristics Saturated Turn-On Time Saturated Turn-Off Time tON tOFF 35 300 ns ns Copyright© 2003 Rev. D.2 Semicoa 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com