2N918UB

2N918UB Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N918UBJ) • JANTX level (2N918UBJX) • JANTXV level (2N918UBJV) • JANS level (2N918UBJS) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS • Radiation testing (total dose) upon request Applications • Ultra-high frequency transistor • Low power • NPN silicon transistor Features • • • • Hermetically sealed Cersot ceramic Also available in chip configuration Chip geometry 0003 Reference document: MIL-PRF-19500/301 Benefits • Qualification Levels: JAN, JANTX, JANTXV and JANS • Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25°C Derate linearly above 25°C Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT TJ TSTG TC = 25°C unless otherwise specified Rating 15 30 3 50 200 1.14 -65 to +200 Unit Volts Volts Volts mA mW mW/°C °C Copyright© 2004 Rev. F.2 Semicoa 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N918UB Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Symbol V(BR)CEO ICBO1 ICBO2 ICBO3 IEBO1 IEBO2 Test Conditions IC = 3 mA VCB = 25 Volts VCB = 30 Volts VCB = 25 Volts, TA = 150°C VEB = 2.5 Volts VEB = 3 Volts Min 15 10 1 1 10 10 Typ Max Units Volts nA µA µA nA µA On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 VBEsat VCEsat Test Conditions IC = 0.5 mA, VCE = 10 Volts IC = 3 mA, VCE = 1 Volts IC = 10 mA, VCE = 10 Volts IC = 3 mA, VCE = 1 Volts TA = -55°C IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% DC Current Gain Min 10 20 20 10 Typ Max 200 Units Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1.0 0.4 Volts Volts Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Noise Figure Power Gain Collector Base time constant Collector efficiency Oscillator Power Output Symbol |hFE| COBO NF Gpe rb’CC η PO Test Conditions VCE = 10 Volts, IC = 4 mA, f = 100 MHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VCE = 6 Volts, IC = 1 mA, f = 60 MHz, Rg = 2.5 MΩ VCB = 12 Volts, IC = 6 mA, f = 200 MHz VCB = 10 Volts, IE = -4 mA, f = 79.8 MHz VCB = 15 Volts, IC = 8 mA, f = 500 MHz VCB = 15 Volts, IC = 8 mA, f = 500 MHz Min 6 Typ Max 18 1.7 6 15 25 30 25 pF dB dB ps mW % Units Copyright© 2004 Rev. F.2 Semicoa 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com