SCA-005C

SCA-005C Silicon PIN Photodiode Data Sheet Description The SCA-005C is a high sensitive silicon PIN photodiode for use in low light applications across the spectral range of 320nm to 1100 nm. This N-type photodiode offers high speed, low capacitance, and high breakdown voltage characteristics. The standard version of model SCA-005C is housed in a hermetically sealed 2 pin TO-5 metal case. It is also available in custom packages and in chip form for hybrid circuit boards. This device is capable of meeting MIL-PRF-19500 requirements for environmental integrity and reliability. Applications • • • • • Medical Analytical Instruments Optical Power Meters Densitometers Radiometers Optical Spectroscopy Features • Photoconductive or Photovoltaic Regime • High-Reliability Hermetic Package • Available in Chip Form • Spectral Response from 320 to 1100nm Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900. • • • • Low Dark Current Low Total Capacitance Fast Rise Time High Responsivity Absolute Maximum Ratings Parameter Operation Temperature Storage Temperature Reverse Voltage Symbol TOP TSTG VR Rating -50 to +120 -55 to +150 100 Unit O O C C V Copyright 2003 Rev. 3.1 Semico. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 3 www.SEMICOA.com SCA-005C Silicon PIN Photodiode Data Sheet DEVICE CHARACTERISTICS characteristics specified at TA = 25°C Mechanical Characteristics Active Diameter Active Area d A 0.10 5.1 Inches mm2 Optical Characteristics Spectral Response Peak Sensitive Wavelength λ λp 320 to 1100 950 nm nm Electrical Characteristics Parameter Dark Current Responsivity Risetime Capacitance Reverse Breakdown Voltage Forward Voltage Shunt Resistance Series Resistance Noise Equivalent Power Symbol ID R tr Cj VBR VF Rsh RS NEP Test Conditions VR = 1 mV VR = 25 V λ = 900 nm λ = 830 nm λ = 632 nm VR = 25 V, RL = 50 Ω VR = 25 V, f = 1 MHz IR = 10 µA IF = 1 mA VR = 1 mV IF = 10 mA Min Typ 0.002 0.5 0.62 0.57 0.35 10 10 100 0.5 200 7.0 2x10-14 Max 2.0 50 Units nA A/W 20 15 1.0 15.0 ns pF V V MΩ Ω W/√Hz 0.5 0.45 0.25 50 10 Package Specifications Bottom View CATHODE/ CASE - 2 Ø0.200 (5.08) 1 2 Hole Size: 0.025 (0.64) Annular Ring: 0.015 (0.38) ANODE - 1 0.500 (12.70) 0.170 (4.32) Ø0.355 (9.02) Ø0.320 (8.13) Ø0.250 (6.35) W INDOW 0.018 (0.47) PIN DIAMETER 0.080 (2.03) Copyright 2003 Rev. 3.1 Semico. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 3 www.SEMICOA.com SCA-005C Silicon PIN Photodiode Data Sheet all curves at TA = 25°C unless otherwise specified CHARACTERISTIC CURVES 0.7 120 R - Responsivity (A/W) 0.6 0.5 0.4 0.3 0.2 0.1 0 400 Cj - Capacitance (pF) 600 800 1000 1200 100 80 60 40 20 0 0 10 20 30 40 50 λ - Wavelength (nm) VR - Reverse Voltage (Volts) Figure 1 Responsivity vs Wavelength ID - Reverse Dark Current (nA) 1000 100 10 1 0.1 0.01 0.001 20 30 40 50 60 O Figure 2 Capacitance vs Reverse Voltage 1 000 ID - Reverse Dark Current (nA) V R = 25 V T = 85 °C T = 50 °C 1 00 1 0 1 0.1 0.01 0.001 0.00001 T = 25 °C VR = 0 V 70 80 90 0.001 0.1 1 0 1 000 T - Temperature ( C) VR - Reverse Voltage (Volts) Figure 3. Reverse Current vs Temperature 1 000 Figure 4. Reverse Current vs Reverse Voltage 1.E-12 IL - Output Light Current (uA) NEP - Noise Equivalent Power 1 00 1 0 1 0.1 0.01 0.001 T = 85 °C (W/Hz ) T = 50 °C 1.E-13 1/2 T = 25 °C 1.E-14 0.01 0.1 1 1 0 1 00 Ee - Radiation Flux @ 950 nm (mW/cm 2 ) 0.0001 0.001 0.01 0.1 1 10 100 VR - Reverse Voltage (Volts) Figure 5. Light Current vs Irradiance @ λ = 950 nm Figure 6 Noise Equivalent Power vs Reverse Voltage Specifications are subject to change without notice. Please consult the website or factory for current information. Copyright 2003 Rev. 3.1 Semico. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 3 of 3 www.SEMICOA.com