HCD65R320_Green(A)

HCD65R320 650V N-Channel Super Junction MOSFET Features Key Parameters • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss Parameter Value Unit BVDSS @Tj,max 700 V ID 12.3 A RDS(on), max 0.32 Ω Qg, Typ 27 nC • Excellent stability and uniformity • 100% Avalanche Tested • Built-in ESD Diode Application Package & Internal Circuit D-PAK • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply (UPS) SYMBOL D • Power Factor Correction (PFC) • TV power & LED Lighting Power G • AC to DC Converters S • Telecom Absolute Maximum Ratings Symbol TC=25℃ unless otherwise specified Parameter Value Unit VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20 V ID IDM 1) Drain Current - Continuous (TC = 25℃) 12.3 A Drain Current - Continuous (TC = 100℃) 7.8 A Drain Current - Pulsed 37 A EAS2) Single Pulsed Avalanche Energy 165 mJ IAR Avalanche Current 1.95 A dv/dt MOSFET dv/dt ruggedness, VDS=0…400V 50 V/ns dv/dt Reverse diode dv/dt, VDS=0…400V, IDS≤ID 15 V/ns PD Power Dissipation (TC = 25℃) 106 W VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) 2000 V TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ Value Unit Thermal Resistance Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case, Max. 1.18 ℃/W RθJA Thermal Resistance, Junction-to-Ambient , Max. 62.5 ℃/W ◎ SEMIHOW REV.A0,June 2019 HCD65R320 June 2019 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Unit On Characteristics VGS Gate Threshold Voltage VDS = VGS, ID = 440 μA 2.0 - 4.0 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 4.1 A - 0.28 0.32 Ω VGS = 0 V, ID = 1mA 650 - - V VDS = 650 V, VGS = 0 - - 1 μA VDS = 650 V, TC = 150℃ - - 100 μA VGS = ±20 V, VDS = 0 V - - ±1 μA - 1150 - pF - 28 - pF - 3.3 - pF - 30 - ns - 20 - ns - 125 - ns - 17 - ns - 27 - nC - 5.3 - nC - 8.0 - nC Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 400 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg( Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 325 V, ID = 5.7 A, RG = 25 Ω (Note 3,4) VDS = 520 V, ID = 5.7 A, VGS = 10 V (Note 3,4) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current - - 12.3 A ISM Maximum Pulsed Drain-Source Diode Forward Current - - 37 A VSD Drain-Source Diode Forward Voltage - - 1.3 V trr Reverse Recovery Time - 310 - ns Qrr Reverse Recovery Charge - 3.4 - μC VGS = 0 V, IS = 5.7 A VR = 400 V, IF = 5.7 A diF/dt = 100 A/μs Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. IAS=1.95A VDD=50V, RG=25, Starting TJ =25C 3. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 4. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,June 2019 HCD65R320 Electrical Characteristics TJ=25 C HCD65R320 Typical Characteristics 35 25℃ 30 25 ID, Drain Current [A] 30 ID, Drain Current [A] 35 20V 10V 8V 7V 6V 20 5.5V 15 5V 10 4.5V 5 25 150℃ 20 15 10 ※ Notes 1. VDS = 20 V 2. 300us Pulse Test 5 0 0 0 5 10 15 0 20 2 Figure 1. On Region Characteristics 0.7 1E+02 0.6 1E+01 8 10 1E+00 0.5 0.4 VGS = 10V 0.3 1E-01 150℃ 1E-02 25℃ VGS = 20V 0.2 1E-03 ※ Notes 1. VGS = 10 V 2. TJ = 25 ℃ ※ Notes 1. VGS = 0 V 2. 300us Pulse Test 1E-04 0.1 1E-05 0 5 10 15 20 25 30 0 0.2 0.4 0.6 ID [A] 0.8 1 1.2 1.4 VSD [V] Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 12 10000 Ciss 10 1000 130V 325V 520V 8 100 VGS [V] Capacitances [pF] 6 Figure 2. Transfer Characteristics IF [A] RDS(ON) [Ω] 4 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Coss 10 4 Crss 1 ※ Notes 1. VGS = 0 V 2. f = 1 MHz 0.1 0 100 200 300 6 400 500 600 2 ※ Notes 1. ID = 5.7 A 0 0 5 10 15 20 25 VDS Drain-Source Voltage [V] QG [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 30 ◎ SEMIHOW REV.A0,June 2019 HCD65R320 Typical Characteristics 2.5 1.2 RDS(on) (Normalized) BVDSS (Normalized) 2 1.1 1 0.9 1.5 1 0.5 ※ Notes 1. VGS = 0 V 2. ID = 1 mA 0.8 ※ Notes 1. VGS = 10 V 2. ID = 4.1 A 0 -100 -50 0 50 100 150 200 -100 -50 0 50 TJ [℃] 150 200 Figure 8. On-Resistance Variation vs. Temperature Figure 7. Breakdown Voltage Variation vs. Temperature 100 14 12 10us 10 100us 10 1ms 1 ID [A] DC 0.1 8 6 4 0.01 ※ Notes 1. TC = 25℃ 2. TJ(MAX) = 150℃ 3. Single Pulse 2 0.001 0 0.1 1 10 100 25 1000 50 75 100 125 150 TC [℃] VDS [V] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 10 ZθJC [K/W] ID [A] 100 TJ [℃] 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 1E-05 0.0001 0.001 0.01 0.1 tP [S] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,June 2019 HCD65R320 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% td(on) tr td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time ◎ SEMIHOW REV.A0,June 2019 HCD65R320 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS R1 _ IS L Driver R2 VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) diF/dt trr tF tS IRM 10% IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,June 2019 HCD65R320 Package Dimension D-PAK (TO-252A) ◎ SEMIHOW REV.A0,June 2019