HFB1N60S

HFB1N60S Sep 2009 BVDSS = 600 V HFB1N60S 600V N-Channel MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 3.0 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 10 Ω (Typ.) @VGS=10V  100% Avalanche Tested RDS(on) typ = 10 Ω ID = 0.3 A TO-92 1 3 1.Gate 2. Drain 3. Source D 2 G S Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25℃) TC=25℃ unless otherwise specified Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Value 600 0.3 0.18 1.2 ±30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/℃ ℃ ℃ 33 0.3 0.3 4.5 0.9 2.5 0.02 -55 to +150 300 Power Dissipation (TL = 25℃) - Derate above 25℃ TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Resistance Characteristics Symbol RθJL RθJA Junction-to-Lead Junction-to-Ambient Parameter Typ. --Max. 50 140 ℃/W Units ◎ SEMIHOW REV.A0,Sep 2009 HFB1N60S Electrical Characteristics TC=25 °C Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 0.15 A 2.0 --10 4.0 12 V Ω Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to25℃ VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125℃ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ------0.6 ------50 250 100 -100 V V/℃ ㎂ ㎂ ㎁ ㎁ ΔBVDSS Breakdown Voltage Temperature /ΔTJ Coefficient IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---130 22 5.0 170 29 6.5 ㎊ ㎊ ㎊ Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 4,5) VDS = 300 V, ID = 1.0 A, RG = 25 Ω -------- 7 21 13 27 3.0 0.5 1.3 24 52 36 64 4.0 --- ㎱ ㎱ ㎱ ㎱ nC nC nC VDS = 480 V, ID = 1.0 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 0.3 A, VGS = 0 V IS = 1.0 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) --------190 0.53 0.3 1.2 1.4 --A V ㎱ μC Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=59mH, IAS=1.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤0.3A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,Sep 2009 HFB1N60S Typical Characteristics ID, Drain Current [A] ID, Drain Current [A] VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics 30 RDS(ON)[Ω], Drain-Source On-Resistance VGS = 10V 20 15 10 VGS = 20V 5 * Note : TJ = 25oC 0 0.0 0.5 1.0 1.5 2.0 2.5 ID, Drain Current[A] IDR, Reverse Drain Current [A] 25 VSD, Source-Drain Voltage [V] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 250 12 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 200 10 VDS = 120V VDS = 300V Capacitances [pF] 150 Ciss 8 VDS = 480V 6 100 Coss * Note ; 1. VGS = 0 V 2. f = 1 MHz 4 50 Crss 0 10-1 2 * Note : ID = 1A 100 101 0 0 1 2 3 4 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ◎ SEMIHOW REV.A0,Sep 2009 HFB1N60S Typical Characteristics (continued) 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.5 1.0 ∗ Note : 1. VGS = 10 V 2. ID = 0.15 A 0.5 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 7. Breakdown Voltage Variation vs Temperature 0.3 Figure 8. On-Resistance Variation vs Temperature ID, Drain Current [A] ID, Drain Current [A] 0.2 0.1 0.0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [oC] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature ZθJL(t), Thermal Response t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,Sep 2009 HFB1N60S Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF Same Type as DUT VDS VGS Qg 10V VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDD ( 0.5 rated VDS ) VDS 90% 10V DUT Vin 10% td(on) t on tr td(off) t off tf Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L VDS VDD ID RG DUT VDD BVDSS IAS BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD ID (t) VDS (t) tp 10V Time ◎ SEMIHOW REV.A0,Sep 2009 HFB1N60S Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG Same Type as DUT VDD VGS • dv/dt controlled by RG • IS controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,Sep 2009 HFB1N60S Package Dimension TO-92 4.58±0.25 3.71±0.2 4.58±0.25 0.46±0.1 1.27typ 1.27typ 3.6±0.25 1.02±0.1 3.71±0.25 14.47±0.5 3° 4° ◎ SEMIHOW REV.A0,Sep 2009 HFB1N60S TO-92 TAPING W2 W W1 W0 D 0 F1 F2 P1 P P2 Dimension [mm] Item Component pitch Side lead to center of feed hole Center lead to center of feed hole Lead pitch Carrier Tape width Adhesive tape width Tape feed hole location Adhesive tape position Symbol P P1 P2 FI,F2 W W0 W1 W2 H H0 H1 D0 Reference 12.7 3.85 6.35 2.5 18.0 6.0 9.0 H0 Tolerance ±0.5 ±0.5 ±0.5 +0.2/-0.1 +1.0/-0.5 ±0.5 ±0.5 1.0 MAX 19.5 16.0 27.0 max 4.0 ±0.2 ±1 ±0.5 Center of feed hole to bottom of component Center of feed hole to lead form Component height Tape feed hole diameter H ◎ SEMIHOW REV.A0,Sep 2009 H1