HFB1N70

HFB1N70 Jan 2007 BVDSS = 700 V HFB1N70 700V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.5 nC (Typ.) Gate Charge nC (Typ Extended Safe Operating Area Lower RDS(ON) : 10.3 Ω (Typ.) @VGS=10V 100% Avalanche Tested RDS(on) typ = 10.3 Ω ID = 0.3 A TO-92 2 3 1.Gate 2. Drain 3. Source D 1 G S Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TC=25℃ unless otherwise specified Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Value 700 0.3 0.18 1.2 ±30 (Note 2) (Note 1) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ 33 0.3 0.25 4.5 2.5 0.02 -55 to +150 300 Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Resistance Characteristics Symbol RθJL RθJA Junction-to-Lead Junction-to-Ambient Parameter Typ. --Max. 50 140 ℃/W Units ◎ SEMIHOW REV.A0,Apr 2006 HFB1N70 Electrical Characteristics TC=25 °C Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 0.15 A 2.5 --10.3 4.5 14 V Ω Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ 250 ID = 250 ㎂, Referenced to25℃ VDS = 700 V, VGS = 0 V VDS = 560 V, TC = 125℃ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 700 ------0.65 ------1 10 100 -100 V V/℃ ㎂ ㎂ ㎁ ㎁ ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔT J IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---150 15 3.5 195 20 4.5 ㎊ ㎊ ㎊ Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 4,5) VDS = 300 V, ID = 0.8 A, RG = 25 Ω -------- 12 40 20 30 4.5 1.0 2.5 30 140 60 80 6.0 --- ㎱ ㎱ ㎱ ㎱ nC nC nC VDS = 560 V, ID = 0.8 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 0.3 A, VGS = 0 V IS = 0.8 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) --------160 0.45 0.3 1.2 1.4 --A V ㎱ μC Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=96mH, IAS=0.8A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤0.3A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% Width 300 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,Apr 2006 HFB1N70 Typical Characteristics Figure 1. On Region Characteristics Figure 2. Transfer Characteristics 60 RDS(on) , [Ω] Drain-Source On-Resistance 50 VGS = 10V 40 VGS = 20V 30 20 10 * Note : TJ = 25 C o 0 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 ID , Drain Current [A] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current with Source Current and Temperature 12 250 Ciss 200 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 VDS = 140V VDS = 350V VGS, Gate-Source Voltage [V] Capacitances [pF] 8 150 VDS = 560V 6 100 Coss Crss ※ Note ; 1. VGS = 0 V 2. f = 1 MHz 4 50 2 * Notes : ID = 0.8 A 0 -1 10 0 10 0 10 1 0 1 2 3 4 5 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ◎ SEMIHOW REV.A0,Apr 2006 HFB1N70 Typical Characteristics 1.2 (continued) 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 0.9 * Note : 1. VGS = 0 V 2. ID = 250μA 0.5 * Note : 1. VGS = 10 V 2. ID = 0.15 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 0.4 Operation in This Area is Limited by R DS(on) 10 0 ID, Drain Current [A] 100 μs 1 ms 10 ms 100 ms 0.3 ID, Drain Current [A] 0.2 DC * Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 0.1 10 -1 10 0 10 1 10 2 10 3 0.0 25 50 75 100 o 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 10 2 D = 0 .5 (t), Thermal Response 10 1 0 .2 0 .1 0 .0 5 * N o te s : o 1 . Z θ J C ( t) = 5 0 C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 PDM s in g le p u ls e 3 . T J M - T C = P D M * Z θ J C ( t) 10 0 0 .0 2 0 .0 1 t1 Z t2 10 2 θJC 10 -1 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 3 Figure 11. Transient Thermal Response Curve 11 Th t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] ◎ SEMIHOW REV.A0,Apr 2006 HFB1N70 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF Same Type as DUT VDS VGS Qg 10V VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDD ( 0.5 rated VDS ) VDS 90% 10V DUT Vin 10% td(on) t on tr td(off) t off tf Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms VDS ID RG L VDD BVDSS IAS BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD ID (t) DUT VDD tp 10V VDS (t) (t) Time ◎ SEMIHOW REV.A0,Apr 2006 HFB1N70 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG Same Type as DUT VDD VGS • dv/dt controlled by RG • IS controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,Apr 2006 HFB1N70 Package Dimension TOTO-92 4.58±0.25 4.58±0.25 3° 3.71±0.2 4° 0.46±0.1 14.47±0.5 1.27typ 1.27typ 3.6±0.25 1.02±0.1 3.71±0.25 ◎ SEMIHOW REV.A0,Apr 2006 HFB1N70 TOTO-92 TAPING W2 W W1 W0 D 0 F1 F2 P1 P P2 Item Component pitch Side lead to center of feed hole Center lead to center of feed hole lead to center of feed hole Lead pitch Carrier Tape width Adhesive tape width Tape feed hole location Adhesive tape position tape pos Symbol P P1 P2 FI,F2 W W0 W1 W2 H H0 H1 D0 Dimension [mm] Reference 12.7 3.85 6.35 2.5 18.0 6.0 9.0 1.0 MAX MAX 19.5 16.0 27.0 max 4.0 ±0.2 ±1 ±0.5 Tolerance ±0.5 ±0.5 ±0.5 +0.2/-0.1 +1.0/-0.5 ±0.5 ±0.5 Center of feed hole to bottom of component Center of feed hole to lead form Component height Tape feed hole diameter H0 H ◎ SEMIHOW REV.A0,Apr 2006 H1