HFD1N65S

HFD1N65S / HFU1N65S April 2009 BVDSS = 650 V HFD1N65S / HFU1N65S 650V N-Channel MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 3.0 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 10.5 Ω (Typ.) @VGS=10V RDS(on) typ = 10.5 Ω ID = 0.9 A D-PAK 2 1 1 3 2 3 I-PAK HFD1N65S HFU1N65S 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25℃) * TC=25℃ unless otherwise specified Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Value 650 0.9 0.57 3.6 ±30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/℃ ℃ ℃ 26 0.9 2.8 4.5 2.5 28 0.22 -55 to +150 300 Power Dissipation (TC = 25℃) - Derate above 25℃ TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Resistance Characteristics Symbol RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient* Junction-to-Ambient Parameter Typ. ---Max. 4.53 50 110 ℃/W Units * When mounted on the minimum pad size recommended (PCB Mount) ◎ SEMIHOW REV.A0,Apr 2009 HFD1N65S / HFU1N65S Electrical Characteristics TC=25 °C Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 0.45 A 2.5 --10.5 4.5 13.5 V Ω Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to25℃ VDS = 650 V, VGS = 0 V VDS = 520 V, TC = 125℃ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 650 ------0.6 ------1 10 100 -100 V V/℃ ㎂ ㎂ ㎁ ㎁ ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---130 22 5.0 170 29 6.5 ㎊ ㎊ ㎊ Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 4,5) VDS = 325 V, ID = 0.9 A, RG = 25 Ω -------- 7 21 13 27 3.0 0.5 1.3 24 52 36 64 4.0 --- ㎱ ㎱ ㎱ ㎱ nC nC nC VDS = 520 V, ID = 0.9 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 0.9 A, VGS = 0 V IS = 0.9 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) --------190 0.53 0.9 3.6 1.4 --A V ㎱ μC Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=59mH, IAS=0.9A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤0.9A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,Apr 2009 HFD1N65S / HFU1N65S Typical Characteristics ID, Drain Current [A] ID, Drain Current [A] VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics 30 RDS(ON)[Ω], Drain-Source On-Resistance VGS = 10V 20 15 10 VGS = 20V 5 * Note : TJ = 25oC 0 0.0 0.5 1.0 1.5 2.0 2.5 ID, Drain Current[A] IDR, Reverse Drain Current [A] 25 VSD, Source-Drain Voltage [V] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 250 12 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 200 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 VDS = 120V VDS = 300V Capacitances [pF] 150 Ciss 8 VDS = 480V 6 100 Coss * Note ; 1. VGS = 0 V 2. f = 1 MHz 4 50 Crss 0 10-1 2 * Note : ID = 0.9A 0 100 101 0 1 2 3 4 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ◎ SEMIHOW REV.A0,Apr 2009 HFD1N65S / HFU1N65S Typical Characteristics (continued) 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.5 1.0 ∗ Note : 1. VGS = 10 V 2. ID = 0.45 A 0.5 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 7. Breakdown Voltage Variation vs Temperature 1.0 Operation in This Area is Limited by R DS(on) Figure 8. On-Resistance Variation vs Temperature 100 µs 0.8 ID, Drain Current [A] ID, Drain Current [A] 103 100 1 ms 10 ms 100 ms DC * Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse 0.6 0.4 0.2 10-1 100 101 102 0.0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [oC] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature D=0.5 ZθJC(t), Thermal Response 10 0 0.2 0.1 0.05 * Notes : 1. ZθJC(t) = 4.53 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 10-1 0.02 0.01 single pulse PDM t1 t2 101 10 -2 10-5 10-4 10-3 10-2 10-1 100 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,Apr 2009 HFD1N65S / HFU1N65S Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF Same Type as DUT VDS VGS Qg 10V VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDD ( 0.5 rated VDS ) VDS 90% 10V DUT Vin 10% td(on) t on tr td(off) t off tf Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L VDS VDD ID RG DUT VDD BVDSS IAS BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD ID (t) VDS (t) tp 10V Time ◎ SEMIHOW REV.A0,Apr 2009 HFD1N65S / HFU1N65S Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG Same Type as DUT VDD VGS • dv/dt controlled by RG • IS controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,Apr 2009 HFD1N65S / HFU1N65S Package Dimension TO-252 6.6±0.2 5.35±0.15 2.3±0.1 0.5±0.05 5.6±0.2 2.7±0.3 1±0.2 9.7+0.5 -0.3 1.2±0.3 0.05+0.1 -0.05 0.8±0.2 0.6±0.2 2.3typ 2.3typ 0.5+0.1 -0.05 ◎ SEMIHOW REV.A0,Apr 2009 1.2±0.3 HFD1N65S / HFU1N65S TO-251 6.6±0.2 5.35±0.15 2.3±0.1 0.5±0.05 0.8±0.15 7.5±0.3 0.75±0.15 5.6±0.2 7±0.2 0.6±0.1 2.3typ 2.3typ 0.5+0.1 -0.05 1.2±0.3 ◎ SEMIHOW REV.A0,Apr 2009