HFH13N80
Dec 2005
BVDSS = 800 V
HFH13N80
800V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 68 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.77 Ω (Typ.) @VGS=10V 100% Avalanche Tested
RDS(on) typ = 0.77 Ω ID = 12.6 A
TO-3P
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
TC=25℃ unless otherwise specified
Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed
(Note 1)
Value 800 12.6 8.0 50.4 ±30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃
1100 12.6 30 4.0 300 2.38 -55 to +150 300
Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
Thermal Resistance Characteristics
Symbol RθJC RθCS RθJA Junction-to-Case Case-to-Sink Junction-to-Ambient Parameter Typ. -0.24 -Max. 0.42 -40 ℃/W Units
◎ SEMIHOW REV.A0,Dec 2005
HFH13N80
Electrical Characteristics TC=25 °C
Symbol Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 6.3 A 2.5 --0.77 4.5 0.95 V Ω
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to25℃ VDS = 800 V, VGS = 0 V VDS = 640 V, TC = 125℃ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 800 ------0.96 ------1 10 100 -100 V V/℃ ㎂ ㎂ ㎁ ㎁ ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---3300 270 23 4300 350 30 ㎊ ㎊ ㎊
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
(Note 4,5)
VDS = 400 V, ID = 12.6 A, RG = 25 Ω
--------
70 175 140 140 68 20 26
140 350 280 280 88 ---
㎱ ㎱ ㎱ ㎱ nC nC nC
VDS = 640V, ID = 12.6 A, VGS = 10 V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 12.6 A, VGS = 0 V IS = 12.6 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) --------1100 16.4 12.6 50.4 1.4 --A V ㎱ μC
Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=13mH, IAS=12.6A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤12.6A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature
◎ SEMIHOW REV.A0,Dec 2005
HFH13N80
Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
2.0
RDS(ON) [Ω ], Drain-Source On-Resistance
1.6
VGS = 10V
1.2
VGS = 20V
0.8
※ Note : TJ = 25 ℃
0
5
10
15
20
25
30
ID, Drain Current [A]
Figure 3. On Resistance Variation vs Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
12
5000 4500 4000 3500
VGS, Gate-Source Voltage [V]
Ciss
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
VDS = 160V
10
VDS = 400V VDS = 640V
Capacitance [pF]
8
3000 2500 2000 1500 1000 500 0 -1 10 10
0
6
Coss
※ Notes : 1. VGS = 0 V 2. f = 1 MHz
4
Crss
2
※ Note : ID = 12.6A
10
1
0
0
10
20
30
40
50
60
70
80
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Dec 2005
HFH13N80
Typical Characteristics
(continued)
Figure 7. Breakdown Voltage Variation vs Temperature
Figure 8. On-Resistance Variation vs Temperature
14
10
2
Operation in This Area is Limited by R DS(on)
10 µs 100 µs
12
ID, Drain Current [A]
10
1
1 ms 10 ms DC
ID, Drain Current [A]
10 8 6 4 2 0 25
10
0
10
-1
※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse
0
10
-2
10
10
1
10
2
10
3
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [ ℃]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs Case Temperature
D=0.5
Zθ JC Thermal Response (t),
10
-1
0.2 0.1 0.05 0.02 0.01 single pulse
※ Notes : (t) W 1. Zθ JC = 0.42 ℃/ Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Zθ JC (t)
PDM t1
-3
10
-2
t2
10
0
10
-5
10
-4
10
10
-2
10
-1
10
1
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
◎ SEMIHOW REV.A0,Dec 2005
HFH13N80
Fig 12. Gate Charge Test Circuit & Waveform
50KΩ 12V 200nF 300nF
Same Type as DUT VDS
VGS Qg
10V
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS RG
RL VDD
( 0.5 rated VDS )
VDS
90%
10V
DUT
Vin
10%
td(on) t on
tr
td(off) t off
tf
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L VDS VDD ID RG DUT VDD BVDSS IAS
BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD
ID (t) VDS (t)
tp
10V
Time
◎ SEMIHOW REV.A0,Dec 2005
HFH13N80
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT + VDS _ IS L Driver RG
Same Type as DUT
VDD
VGS
• dv/dt controlled by RG • IS controlled by pulse period
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode Forward Voltage Drop
◎ SEMIHOW REV.A0,Dec 2005
HFH13N80
Package Dimension
TO-3P
15.6±0.20 13.6±0.20 9.6±0.20
4.8±0.20
.2 φ3
±0 .20
1.5±0.20
13.9±0.20 14.9±0.20 19.9±0.20
18.7±0.20
1.4±0.20 3±0.20 2±0.20 1±0.20
3.5±0.20
16.5±0.20
5.45typ 5.45typ
0.6±0.20
◎ SEMIHOW REV.A0,Dec 2005