HFH6N90
Mar 2010
BVDSS = 900 V
HFH6N90
900V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.95 Ω (Typ.) @VGS=10V 100% Avalanche Tested
RDS(on) typ = 1.95 Ω ID = 6.0 A
TO-3P
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
TC=25℃ unless otherwise specified
Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed
(Note 1)
Value 900 6.0 3.8 24 ±30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃
650 6.0 19.8 4.5 198 1.59 -55 to +150 300
Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
Thermal Resistance Characteristics
Symbol RθJC RθCS RθJA Junction-to-Case Case-to-Sink Junction-to-Ambient Parameter Typ. -0.24 -Max. 0.63 -40 ℃/W Units
◎ SEMIHOW REV.A0,Mar 2010
HFH6N90
Electrical Characteristics TC=25 °C
Symbol Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 3.0 A 2.5 --1.95 4.5 2.4 V Ω
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to25℃ VDS = 900 V, VGS = 0 V VDS = 720 V, TC = 125℃ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 900 ------1.03 ------1 10 100 -100 V V/℃ ㎂ ㎂ ㎁ ㎁ ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---1550 110 15 2010 145 20 ㎊ ㎊ ㎊
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
(Note 4,5)
VDS = 450 V, ID = 6.0 A, RG = 25 Ω
--------
40 120 60 70 35 10 13
80 240 120 140 45 ---
㎱ ㎱ ㎱ ㎱ nC nC nC
VDS = 720V, ID = 6.0 A, VGS = 10 V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 6.0 A, VGS = 0 V IS = 6.0 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) --------780 9.0 6.0 24 1.4 --A V ㎱ μC
Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=34mH, IAS=6.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤6.0A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature
◎ SEMIHOW REV.A0,Mar 2010
HFH6N90
Typical Characteristics
10
1
ID, Drain Current [A]
ID, Drain Current [A]
10
0
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
10
1
150oC 25 C
10
0
o
-55 C
o
10
-1
※ Notes : 1. 250μ s Pulse Test 2. TC = 25 ℃
10
-2
10
-1
-1
※ Notes : 1. VDS = 50V 2. 250μ s Pulse Test
10
10
0
10
1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
4.5
1
RDS(ON) [Ω ], Drain-Source On-Resistance
3.5
VGS = 10V VGS = 20V
3.0
IDR, Reverse Drain Current [A]
4.0
10
10
0
2.5
150 ℃
25 ℃
※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test
2.0
※ Note : TJ = 25 ℃
1.5
10 0 3 6 9 12 15 18
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On Resistance Variation vs Drain Current and Gate Voltage
2500
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
12
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
VDS = 180V
2000
VGS, Gate-Source Voltage [V]
10
VDS = 450V VDS = 720V
Capacitance [pF]
Ciss
1500
8
6
1000
Coss
※ Notes : 1. VGS = 0 V 2. f = 1 MHz
4
500
2
※ Note : ID = 6.0A
Crss
0 -1 10 10
0
0
10
1
0
5
10
15
20
25
30
35
40
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Mar 2010
HFH6N90
Typical Characteristics
(continued)
1.2
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
※ Notes : 1. VGS = 10 V 2. ID = 3.0 A
0.9
※ Notes : 1. VGS = 0 V 2. ID = 250 μ A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs Temperature
102
Figure 8. On-Resistance Variation vs Temperature
6
Operation in This Area is Limited by R DS(on)
100 µs
ID, Drain Current [A]
1 ms 10 ms
ID, Drain Current [A]
101
4
100
DC
2
10-1
* Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse
10-2 100
101
102
103
0 25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [ ℃]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs Case Temperature
100
ZθJC(t), Thermal Response
D=0.5 0.2
10-1
* Notes : 1. ZθJC(t) = 0.63 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t)
0.1 0.05 0.02 0.01
10-2
PDM
single pulse
t1
10-2 10-1
t2
101
10-5
10-4
10-3
100
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
◎ SEMIHOW REV.A0,Mar 2010
HFH6N90
Fig 12. Gate Charge Test Circuit & Waveform
50KΩ 12V 200nF 300nF
Same Type as DUT VDS
VGS Qg
10V
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS RG
RL VDD
( 0.5 rated VDS )
VDS
90%
10V
DUT
Vin
10%
td(on) t on
tr
td(off) t off
tf
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L VDS VDD ID RG DUT VDD BVDSS IAS
BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD
ID (t) VDS (t)
tp
10V
Time
◎ SEMIHOW REV.A0,Mar 2010
HFH6N90
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT + VDS _ IS L Driver RG
Same Type as DUT
VDD
VGS
• dv/dt controlled by RG • IS controlled by pulse period
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode Forward Voltage Drop
◎ SEMIHOW REV.A0,Mar 2010
HFH6N90
Package Dimension
TO-3P
15.6±0.20 13.6±0.20 9.6±0.20
4.8±0.20
.2 φ3
±0 .20
1.5±0.20
13.9±0.20 14.9±0.20 19.9±0.20
18.7±0.20
1.4±0.20 3±0.20 2±0.20 1±0.20
3.5±0.20
16.5±0.20
5.45typ 5.45typ
0.6±0.20
◎ SEMIHOW REV.A0,Mar 2010