HFI640

HFW640 / HFI640 Mar 2008 BVDSS = 200 V HFW640 / HFI640 200V N-Channel MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 37 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.145 Ω (Typ.) @VGS=10V  100% Avalanche Tested RDS(on) typ = 0.145Ω ID = 18 A D2-PAK 2 1 3 1 2 3 I2-PAK HFW640 HFI640 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25℃) TC=25℃ unless otherwise specified Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Value 200 18 11.4 72 ±30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/℃ ℃ ℃ 250 18 13.9 5.5 3.13 139 1.11 -55 to +150 300 Power Dissipation (TC = 25℃) - Derate above 25℃ TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Resistance Characteristics Symbol RθJC Rθ JA RθJA Junction-to-Case Junction-to-Ambient* Junction-to-Ambient Parameter Typ. ---Max. 0.9 40 62.5 ℃/W Units * When mounted on the minimum pad size recommended (PCB Mount) ◎ SEMIHOW REV.A0,Mar 2008 HFW640 / HFI640 Electrical Characteristics TC=25 °C Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 9.0 A 2.0 --0.145 4.0 0.18 V Ω Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to25℃ VDS = 200 V, VGS = 0 V VDS = 160 V, TC = 125℃ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 200 ------0.2 ------1 10 100 -100 V V/℃ ㎂ ㎂ ㎁ ㎁ ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---1300 175 26 1700 230 34 ㎊ ㎊ ㎊ Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 4,5) VDS = 100 V, ID = 18 A, RG = 25 Ω -------- 20 150 150 110 37 5.5 13 40 300 300 220 48 --- ㎱ ㎱ ㎱ ㎱ nC nC nC VDS = 160 V, ID = 18 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 18 A, VGS = 0 V IS = 18 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) --------200 1.50 18 72 1.5 --A V ㎱ μC Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1.16mH, IAS=18A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤18A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,Mar 2008 HFW640 / HFI640 Typical Characteristics ID, Drain Current [A] ※ Notes 1. 250us Pulse Test 2. T c=25℃ ID, Drain Current [A] VGS 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V Bottom: 5.0V Top: ※ Notes 1. VDS=40V 2. 250us Pulse Test VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics RDS(ON)[Ω], Drain-Source On-Resistance IDR, Reverse Drain Current [A] ※ Notes : T J=25℃ ※ Notes 1. VGS=0V 2. 250us Pulse Test ID, Drain Current [A] VSD, Source-Drain Voltage [V] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 2500 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss VGS, Gate-Source Voltage [V] 2000 10 VDS = 40V VDS = 100V VDS = 160V Capacitances [pF] 8 1500 6 1000 Coss ※ Note ; 1. VGS = 0 V 2. f = 1 MHz 4 500 Crss 2 * Note : ID = 18.0 A 0 -1 10 10 0 10 1 0 0 8 16 24 32 40 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ◎ SEMIHOW REV.A0,Mar 2008 HFW640 / HFI640 Typical Characteristics (continued) 1.2 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 ∗ Note : 1. VGS = 10 V 2. ID = 1.0 A 0.9 * Note : 1. VGS = 0 V 2. ID = 250 µA 0.5 0.8 -100 -50 0 50 100 150 200 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 7. Breakdown Voltage Variation vs Temperature 20 Figure 8. On-Resistance Variation vs Temperature 102 Operation in This Area is Limited by R DS(on) 100 µs 16 ID, Drain Current [A] 10 1 ID, Drain Current [A] 1 ms 10 ms 100 ms DC 12 100 8 10-1 * Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse 4 10-2 100 101 102 0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [ ℃] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 10 0 D=0.5 Zθ JC Thermal Response (t), 0.2 10 -1 0.1 0.05 0.02 0.01 ※ Notes : (t) W 1. Zθ JC = 0.9 ℃/ Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Zθ JC (t) PDM single pulse 10 -2 t1 -3 t2 10 0 10 -5 10 -4 10 10 -2 10 -1 10 1 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,Mar 2008 HFW640 / HFI640 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF Same Type as DUT VDS VGS Qg 10V VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDD ( 0.5 rated VDS ) VDS 90% 10V DUT Vin 10% td(on) t on tr td(off) t off tf Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L VDS VDD ID RG DUT VDD BVDSS IAS BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD ID (t) VDS (t) tp 10V Time ◎ SEMIHOW REV.A0,Mar 2008 HFW640 / HFI640 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG Same Type as DUT VDD VGS • dv/dt controlled by RG • IS controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,Mar 2008 HFW640 / HFI640 Package Dimension ◎ SEMIHOW REV.A0,Mar 2008 HFW640 / HFI640 Package Dimension ◎ SEMIHOW REV.A0,Mar 2008