HFP10N65S

HFP10N65S Sep 2009 BVDSS = 650 V HFP10N65S 650V N-Channel MOSFET FEATURES q q q q q q q q Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.83 Ω (Typ.) @VGS=10V RDS(on) typ = 0.83 Ω ID = 9.2 A TO-220 1 2 3 1.Gate 2. Drain 3. Source q 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TC=25℃ unless otherwise specified Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Value 650 9.2 5.5 36.8 ±30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ 650 9.2 15.6 4.5 156 1.25 -55 to +150 300 Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Resistance Characteristics Symbol RθJC RθCS RθJA Junction-to-Case Case-to-Sink Junction-to-Ambient Parameter Typ. -0.5 -Max. 0.8 -62.5 ℃/W Units ◎ SEMIHOW REV.A0,MAY 2009 HFP10N65S Electrical Characteristics TC=25 °C Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 4.6 A 2.0 --0.83 4.0 1.0 V Ω Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to 25℃ VDS = 650 V, VGS = 0 V VDS = 520 V, TC = 125℃ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 650 ------0.7 ------1 10 100 -100 V V/℃ ㎂ ㎂ ㎁ ㎁ ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔT J IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---1450 145 13 1885 190 17 ㎊ ㎊ ㎊ Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 4,5) VDS = 325 V, ID = 9.2 A, RG = 25 Ω -------- 23 69 144 77 29 6.8 10.3 55 150 300 165 38 --- ㎱ ㎱ ㎱ ㎱ nC nC nC VDS = 520V, ID = 9.2 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 9.2 A, VGS = 0 V IS = 9.2 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) --------420 4.2 9.2 36.8 1.4 --A V ㎱ μC Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=14.2mH, IAS=9.2A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤9.2A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,MAY 2009 HFP10N65S Typical Characteristics ID, Drain Current [A] ID, Drain Current [A] VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics 2.0 Drain-Source On-Resistance 1.5 VGS = 10V 1.0 VGS = 20V 0.5 * Note : TJ = 25 C o 0.0 0 5 10 ID, Drain Current[A] 15 20 25 30 35 IDR, Reverse Drain Current [A] RDS(ON)[Ω], VSD, Source-Drain Voltage [V] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 3000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 VGS, Gate-Source Voltage [V] 2500 10 VDS = 120V VDS = 300V VDS = 520V Capacitances [pF] 2000 Ciss 8 1500 6 Coss 1000 ∗ Note ; 1. VGS = 0 V 4 500 Crss 2. f = 1 MHz 2 * Note : ID = 9.2A 0 -1 10 0 10 0 10 1 0 4 8 12 16 20 24 28 32 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ◎ SEMIHOW REV.A0,MAY 2009 HFP10N65S Typical Characteristics (continued) 2.5 BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(ON), (Normalized) Drain-Source On-Resistance 2.0 1.5 1.0 0.5 ∗ Note : 1. VGS = 10 V 2. ID = 4.6 A 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [oC] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature 10 10 2 Figure 8. On-Resistance Variation vs Temperature Operation in This Area is Limited by R DS(on) 10 μs 8 ID, Drain Current [A] 10 1 10 0 1 ms 10 ms 100 ms DC ID, Drain Current [A] 100 μs 6 4 10 -1 * Notes : o 1. TC = 25 C 2. TJ = 150 C o 2 10 -2 3. Single Pulse 0 10 10 1 10 2 10 3 0 25 50 75 100 o 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 10 0 D = 0 .5 (t), Thermal Response 0 .2 10 -1 0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e * N o te s : 1 . Z θJC (t) = 0 .8 o C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) θJC Z 10 -2 PDM t1 t2 10 0 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,MAY 2009 HFP10N65S Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF Same Type as DUT VDS VGS Qg 10V VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDD ( 0.5 rated VDS ) VDS 90% 10V DUT Vin 10% td(on) t on tr td(off) t off tf Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms VDS ID RG L VDD BVDSS IAS BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD ID (t) DUT VDD tp 10V VDS (t) Time ◎ SEMIHOW REV.A0,MAY 2009 HFP10N65S Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG Same Type as DUT VDD VGS • dv/dt controlled by RG • IS controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,MAY 2009 HFP10N65S Package Dimension TO-220 (A) 9.90±0.20 . φ3 60 ±0 0 .2 4.50±0.20 1.30±0.20 15.70±0.20 2.80±0.20 9.19±0.20 6.50±0.20 13.08±0.20 0.80±0.20 2.54typ 2.54typ 0.50±0.20 3.02±0.20 1.27±0.20 1.52±0.20 2.40±0.20 ◎ SEMIHOW REV.A0,MAY 2009 HFP10N65S TO-220 (B) ±0.20 . φ3 84 0 .2 ±0 4.57±0.20 1.27±0.20 15.44±0.20 2.74±0.20 9.14±0.20 6.30±0.20 2.67±0.20 13.28±0.20 1.27±0.20 2.67±0.20 2.54typ 2.54typ 0.81±0.20 0.40±0.20 ◎ SEMIHOW REV.A0,MAY 2009