HFP2N60S
Nov 2007
BVDSS = 600 V
HFP2N60S
600V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4.2 Ω (Typ.) @VGS=10V 100% Avalanche Tested
RDS(on) typ = 4.2 Ω ID = 2.0 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
TC=25℃ unless otherwise specified
Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed
(Note 1)
Value 600 2.0 1.35 8.0 ±30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃
120 2.0 5.4 4.5 54 0.43 -55 to +150 300
Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
Thermal Resistance Characteristics
Symbol RθJC RθCS RθJA Junction-to-Case Case-to-Sink Junction-to-Ambient Parameter Typ. -0.5 -Max. 2.32 -62.5 ℃/W Units
◎ SEMIHOW REV.A0,Nov 2007
HFP2N60S
Electrical Characteristics TC=25 °C
Symbol Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 1.0 A 2.0 --4.2 4.0 5.0 V Ω
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to 25℃ VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125℃ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ------0.6 ------1 10 100 -100 V V/℃ ㎂ ㎂ ㎁ ㎁ ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---280 37 6.0 365 48 8.0 ㎊ ㎊ ㎊
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
(Note 4,5)
VDS = 300 V, ID = 2.0 A, RG = 25 Ω
--------
9 25 24 28 6.0 1.3 2.6
28 60 58 66 8.0 ---
㎱ ㎱ ㎱ ㎱ nC nC nC
VDS = 480V, ID = 2.0 A, VGS = 10 V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 2.0 A, VGS = 0 V IS = 2.0 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) --------230 1.0 2.0 8.0 1.4 --A V ㎱ μC
Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=56mH, IAS=2.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤2.0A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature
◎ SEMIHOW REV.A0,Nov 2007
HFP2N60S
Typical Characteristics
ID, Drain Current [A]
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
12
RDS(ON)[Ω], Drain-Source On-Resistance
9
VGS = 10V
6
3
VGS = 20V
* Note : TJ = 25oC
0 0 1 2 3 4 5
ID, Drain Current[A]
IDR, Reverse Drain Current [A]
VSD, Source-Drain Voltage [V]
Figure 3. On Resistance Variation vs Drain Current and Gate Voltage
12
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
VDS = 120V
VGS, Gate-Source Voltage [V]
10
VDS = 300V VDS = 480V
Capacitance [pF]
8
6
4
2
* Note : ID = 2.0A
0
0
2
4
6
8
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Nov 2007
HFP2N60S
Typical Characteristics
(continued)
1.2
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
∗ Note : 1. VGS = 10 V 2. ID = 1.0 A
0.9
* Note : 1. VGS = 0 V 2. ID = 250 µA
0.5
0.8 -100
-50
0
50
100
150
200
0.0 -100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation vs Temperature
2.0
Figure 8. On-Resistance Variation vs Temperature
101
Operation in This Area is Limited by R DS(on)
100 µs
1.5
ID, Drain Current [A]
100
1 ms 10 ms 100 ms DC
ID, Drain Current [A]
1.0
10-1
* Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse
0.5
10-2 100
101
102
103
0.0 25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs Case Temperature
ZθJC(t), Thermal Response
100
D=0.5 0.2 0.1 0.05
* Notes : 1. ZθJC(t) = 2.32 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t)
10-1
0.02 0.01 single pulse
PDM t1 t2
101
10
-2
10-5
10-4
10-3
10-2
10-1
100
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
◎ SEMIHOW REV.A0,Nov 2007
HFP2N60S
Fig 12. Gate Charge Test Circuit & Waveform
50KΩ 12V 200nF 300nF
Same Type as DUT VDS
VGS Qg
10V
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS RG
RL VDD
( 0.5 rated VDS )
VDS
90%
10V
DUT
Vin
10%
td(on) t on
tr
td(off) t off
tf
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L VDS VDD ID RG DUT VDD BVDSS IAS
BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD
ID (t) VDS (t)
tp
10V
Time
◎ SEMIHOW REV.A0,Nov 2007
HFP2N60S
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT + VDS _ IS L Driver RG
Same Type as DUT
VDD
VGS
• dv/dt controlled by RG • IS controlled by pulse period
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode Forward Voltage Drop
◎ SEMIHOW REV.A0,Nov 2007
HFP2N60S
Package Dimension
TO-220 (A)
9.90±0.20
φ3
0± .6
0.
20
4.50±0.20 1.30±0.20
15.70±0.20
2.80±0.20
9.19±0.20
6.50±0.20
13.08±0.20
0.80±0.20 2.54typ 2.54typ 0.50±0.20
3.02±0.20
1.27±0.20 1.52±0.20
2.40±0.20
◎ SEMIHOW REV.A0,Nov 2007
HFP2N60S
TO-220 (B)
±0.20
. φ3
84
±0
0 .2
4.57±0.20 1.27±0.20
15.44±0.20
2.74±0.20
9.14±0.20
6.30±0.20
2.67±0.20
13.28±0.20
1.27±0.20
2.67±0.20
0.81±0.20 2.54typ 2.54typ 0.40±0.20
◎ SEMIHOW REV.A0,Nov 2007