HFP3N80

HFP3N80 Dec 2005 BVDSS = 800 V HFP3N80 800V N-Channel MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 17 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 4.0 Ω (Typ.) @VGS=10V  100% Avalanche Tested RDS(on) typ = 4.0 Ω ID = 3.0 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TC=25℃ unless otherwise specified Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Value 800 3.0 1.9 12 ±30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ 320 3.0 10.7 4.5 107 0.85 -55 to +150 300 Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Resistance Characteristics Symbol RθJC RθCS RθJA Junction-to-Case Case-to-Sink Junction-to-Ambient Parameter Typ. -0.5 -Max. 1.17 -62.5 ℃/W Units ◎ SEMIHOW REV.A0,Dec 2005 HFP3N80 Electrical Characteristics TC=25 °C Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 1.5 A 2.5 --4.0 4.5 4.8 V Ω Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to25℃ VDS = 800 V, VGS = 0 V VDS = 640 V, TC = 125℃ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 800 ------0.99 ------1 10 100 -100 V V/℃ ㎂ ㎂ ㎁ ㎁ ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---700 70 7 910 90 9 ㎊ ㎊ ㎊ Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 4,5) VDS = 400 V, ID = 3.0 A, RG = 25 Ω -------- 20 55 30 40 17 4.5 7.5 40 110 60 80 22 --- ㎱ ㎱ ㎱ ㎱ nC nC nC VDS = 640V, ID = 3.0 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 3.0 A, VGS = 0 V IS = 3.0 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) --------650 5.2 3.0 12 1.4 --A V ㎱ μC Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=67mH, IAS=3.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤3.0A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,Dec 2005 HFP3N80 Typical Characteristics ID, Drain Current [A] ID, Drain Current [A] VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics IDR, Reverse Drain Current [A] RDS(on), [Ω] Drain-Source On-Resistance 10 1 10 0 150 ℃ 25 ℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 1500 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature VDS = 160V 1200 VGS, Gate-Source Voltage [V] 10 VDS = 400V VDS = 640V Capacitance [pF] Ciss 900 8 Coss 600 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 6 4 300 Crss 2 ※ Note : ID = 3.0A 0 -1 10 0 10 0 10 1 0 4 8 12 16 20 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ◎ SEMIHOW REV.A0,Dec 2005 HFP3N80 Typical Characteristics (continued) 1.2 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 1.5 A 0.9 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature 3.0 Operation in This Area is Limited by R DS(on) Figure 8. On-Resistance Variation vs Temperature 101 100 µs 1 ms 10 ms 100 ms DC 2.5 ID, Drain Current [A] ID, Drain Current [A] 2.0 10 0 1.5 1.0 10-1 * Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse 0.5 10-2 0 10 101 102 103 0.0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [ ℃] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 10 0 Zθ JC Thermal Response (t), D=0.5 0.2 -1 0.1 0.05 0.02 0.01 10 ※ Notes : (t) W 1. Zθ JC = 1.17 ℃/ Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Zθ JC (t) PDM single pulse t1 -3 10 -2 -5 -4 -2 -1 t2 0 10 10 10 10 10 10 10 1 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,Dec 2005 HFP3N80 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF Same Type as DUT VDS VGS Qg 10V VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDD ( 0.5 rated VDS ) VDS 90% 10V DUT Vin 10% td(on) t on tr td(off) t off tf Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L VDS VDD ID RG DUT VDD BVDSS IAS BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD ID (t) VDS (t) tp 10V Time ◎ SEMIHOW REV.A0,Dec 2005 HFP3N80 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG Same Type as DUT VDD VGS • dv/dt controlled by RG • IS controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,Dec 2005 HFP3N80 Package Dimension TO-220 (A) 9.90±0.20 φ3 0± .6 0. 20 4.50±0.20 1.30±0.20 15.70±0.20 2.80±0.20 9.19±0.20 6.50±0.20 13.08±0.20 0.80±0.20 2.54typ 2.54typ 0.50±0.20 3.02±0.20 1.27±0.20 1.52±0.20 2.40±0.20 ◎ SEMIHOW REV.A0,Dec 2005 HFP3N80 TO-220 (B) ±0.20 . φ3 84 ±0 0 .2 4.57±0.20 1.27±0.20 15.44±0.20 2.74±0.20 9.14±0.20 6.30±0.20 2.67±0.20 13.28±0.20 1.27±0.20 2.67±0.20 0.81±0.20 2.54typ 2.54typ 0.40±0.20 ◎ SEMIHOW REV.A0,Dec 2005