HFP4N60

HFP4N60 June 2005 BVDSS = 600 V HFP4N60 600V N-Channel MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 15 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.0 Ω (Typ.) @VGS=10V  100% Avalanche Tested RDS(on) typ = 2.0 Ω ID = 4.0 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TC=25℃ unless otherwise specified Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Value 600 4.0 2.5 16 ±30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ 240 4.0 10 5.5 100 0.8 -55 to +150 300 Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Resistance Characteristics Symbol RθJC RθCS RθJA Junction-to-Case Case-to-Sink Junction-to-Ambient Parameter Typ. -0.5 -Max. 1.25 -62.5 ℃/W Units ◎ SEMIHOW REV.A0,June 2005 HFP4N60 Electrical Characteristics TC=25 °C Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 2.0 A 2.5 --2.0 4.5 2.5 V Ω Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to25℃ VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125℃ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ------0.65 ------1 10 100 -100 V V/℃ ㎂ ㎂ ㎁ ㎁ ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---600 65 11 780 85 14 ㎊ ㎊ ㎊ Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 4,5) VDS = 300 V, ID = 4.0 A, RG = 25 Ω -------- 15 40 50 40 15 3.4 6.7 30 80 100 80 20 --- ㎱ ㎱ ㎱ ㎱ nC nC nC VDS = 480V, ID = 4.0 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 4.0 A, VGS = 0 V IS = 4.0 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) --------300 2.2 4.0 16 1.4 --A V ㎱ μC Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=27.5mH, IAS=4.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤4.0A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,June 2005 HFP4N60 Typical Characteristics 101 ID, Drain Current [A] 100 ID, Drain Current [A] V 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V Bottem 5.0V Top: 101 150℃ 100 25℃ -55℃ ※ Note : 1. VDS=40V 2. 250㎲ Pulse Test 10-1 ※ Note : 1. 250㎲ Pulse Test 2. TC=25℃ 10-1 10-1 100 101 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics 12 101 RDS(ON)[Ω], Drain-Source On-Resistance VGS=10V 8 6 VGS=20V IDR, Reverse Drain Current [A] 10 100 4 150℃ 25℃ ※ Note : 1. VGS=0V 2. 250㎲ Pulse Test 2 ※ Note : TJ=25℃ 0 10-1 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 10 12 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain Voltage [V] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 1200 12 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature VGS, Gate-Source Voltage [V] 1000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 VDS = 120V VDS = 300V Capacitances [pF] 800 Ciss 8 VDS = 480V 600 6 Coss 400 * Note ; 1. VGS = 0 V 2. f = 1 MHz 4 200 Crss 2 * Note : ID = 4A 0 10-1 100 101 0 0 2 4 6 8 10 12 14 16 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ◎ SEMIHOW REV.A0,June 2005 HFP4N60 Typical Characteristics (continued) 1.2 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 * Note : 1. VGS = 10 V 2. ID = 2.0 A 0.9 ※ Note : 1. VGS=0V 2. ID=250㎂ 0.5 0.8 -100 -50 0 50 100 150 200 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 7. Breakdown Voltage Variation vs Temperature 102 4 Figure 8. On-Resistance Variation vs Temperature Operation in This Area is Limited by R DS(on) ID, Drain Current [A] 100 1 ms 10 ms 100 ms DC ID, Drain Current [A] 103 101 100 µs 3 2 10-1 * Notes : 1. TC = 25 oC 2. TJ = 150 C 3. Single Pulse o 1 10-2 100 101 102 0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [ ℃] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 10 0 Zθ JC Thermal Response (t), D=0.5 0.2 10 -1 0.1 0.05 0.02 0.01 single pulse ※ Notes : (t) W 1. Zθ JC = 1.25 ℃/ Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Zθ JC (t) PDM t1 -3 10 -2 t2 10 0 10 -5 10 -4 10 10 -2 10 -1 10 1 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,June 2005 HFP4N60 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF Same Type as DUT VDS VGS Qg 10V VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDD ( 0.5 rated VDS ) VDS 90% 10V DUT Vin 10% td(on) t on tr td(off) t off tf Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L VDS VDD ID RG DUT VDD BVDSS IAS BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD ID (t) VDS (t) tp 10V Time ◎ SEMIHOW REV.A0,June 2005 HFP4N60 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG Same Type as DUT VDD VGS • dv/dt controlled by RG • IS controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,June 2005 HFP4N60 Package Dimension TO-220 (A) 9.90±0.20 φ3 0± .6 0. 20 4.50±0.20 1.30±0.20 15.70±0.20 2.80±0.20 9.19±0.20 6.50±0.20 13.08±0.20 0.80±0.20 2.54typ 2.54typ 0.50±0.20 3.02±0.20 1.27±0.20 1.52±0.20 2.40±0.20 ◎ SEMIHOW REV.A0,June 2005 HFP4N60 TO-220 (B) ±0.20 . φ3 84 ±0 0 .2 4.57±0.20 1.27±0.20 15.44±0.20 2.74±0.20 9.14±0.20 6.30±0.20 2.67±0.20 13.28±0.20 1.27±0.20 2.67±0.20 0.81±0.20 2.54typ 2.54typ 0.40±0.20 ◎ SEMIHOW REV.A0,June 2005