HFP634

HFP634 July 2005 BVDSS = 250 V HFP634 250V N-Channel MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 30 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.36 Ω (Typ.) @VGS=10V  100% Avalanche Tested RDS(on) typ = 0.36 Ω ID = 8.1 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TC=25℃ unless otherwise specified Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Value 250 8.1 5.1 32.4 ±30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ 200 8.1 7.4 5.5 74 0.59 -55 to +150 300 Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Resistance Characteristics Symbol RθJC RθCS RθJA Junction-to-Case Case-to-Sink Junction-to-Ambient Parameter Typ. -0.5 -Max. 1.69 -62.5 ℃/W Units ◎ SEMIHOW REV.A0,July 2005 HFP634 Electrical Characteristics TC=25 °C Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 4.05 A 2.0 --0.36 4.0 0.45 V Ω Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to25℃ VDS = 250 V, VGS = 0 V VDS = 200 V, TC = 125℃ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 250 ------0.27 ------1 10 100 -100 V V/℃ ㎂ ㎂ ㎁ ㎁ ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---780 95 20 1000 125 25 ㎊ ㎊ ㎊ Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 4,5) VDS = 125 V, ID = 8.1 A, RG = 25 Ω -------- 15 75 100 65 30 4.0 15 30 150 200 130 38 --- ㎱ ㎱ ㎱ ㎱ nC nC nC VDS = 200 V, ID = 8.1 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 8.1 A, VGS = 0 V IS = 8.1 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) --------170 0.9 8.1 32.4 1.5 --A V ㎱ μC Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=4.9mH, IAS=8.1A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤8.1A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,July 2005 HFP634 Typical Characteristics Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 1500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = 50V VGS, Gate-Source Voltage [V] 1200 10 VDS = 125V VDS = 200V Capacitances [pF] Ciss 900 8 6 600 Coss ※ Note ; 1. VGS = 0 V 2. f = 1 MHz 4 300 Crss 2 ※ Note : ID = 8.1 A 0 -1 10 10 0 10 1 0 0 5 10 15 20 25 30 35 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ◎ SEMIHOW REV.A0,July 2005 HFP634 Typical Characteristics (continued) Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 10 8 ID, Drain Current [A] 6 4 2 0 25 50 75 100 125 150 TC, Case Temperature [ ℃] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 10 0 Zθ JC Thermal Response (t), D=0.5 0.2 0.1 10 -1 0.05 0.02 0.01 single pulse ※ Notes : (t) W 1. Zθ JC = 1.69 ℃/ Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Zθ JC (t) PDM t1 -3 10 -2 t2 10 0 10 -5 10 -4 10 10 -2 10 -1 10 1 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,July 2005 HFP634 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF Same Type as DUT VDS VGS Qg 10V VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDD ( 0.5 rated VDS ) VDS 90% 10V DUT Vin 10% td(on) t on tr td(off) t off tf Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L VDS VDD ID RG DUT VDD BVDSS IAS BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD ID (t) VDS (t) tp 10V Time ◎ SEMIHOW REV.A0,July 2005 HFP634 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG Same Type as DUT VDD VGS • dv/dt controlled by RG • IS controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,July 2005 HFP634 Package Dimension TO-220 (A) 9.90±0.20 φ3 0± .6 0. 20 4.50±0.20 1.30±0.20 15.70±0.20 2.80±0.20 9.19±0.20 6.50±0.20 13.08±0.20 0.80±0.20 2.54typ 2.54typ 0.50±0.20 3.02±0.20 1.27±0.20 1.52±0.20 2.40±0.20 ◎ SEMIHOW REV.A0,July 2005 HFP634 TO-220 (B) ±0.20 . φ3 84 ±0 0 .2 4.57±0.20 1.27±0.20 15.44±0.20 2.74±0.20 9.14±0.20 6.30±0.20 2.67±0.20 13.28±0.20 1.27±0.20 2.67±0.20 0.81±0.20 2.54typ 2.54typ 0.40±0.20 ◎ SEMIHOW REV.A0,July 2005