HFP640

HFP640 July 2005 BVDSS = 200 V HFP640 200V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 37 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.145 Ω (Typ.) @VGS=10V 100% Avalanche Tested RDS(on) typ = 0.145Ω ID = 18 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TC=25℃ unless otherwise specified Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Value 200 18 11.4 72 ±30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ 250 18 13.9 5.5 139 1.11 -55 to +150 300 Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Resistance Characteristics Symbol RθJC RθCS RθJA Junction-to-Case Case-to-Sink Junction-to-Ambient Parameter Typ. -0.5 -Max. 0.9 -62.5 ℃/W Units ◎ SEMIHOW REV.A0,July 2005 HFP640 Electrical Characteristics TC=25 °C Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 9.0 A 2.0 --0.145 4.0 0.18 V Ω Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to25℃ VDS = 200 V, VGS = 0 V VDS = 160 V, TC = 125℃ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 200 ------0.2 ------1 10 100 -100 V V/℃ ㎂ ㎂ ㎁ ㎁ ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔT J IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---1300 175 26 1700 230 34 ㎊ ㎊ ㎊ Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 4,5) VDS = 100 V, ID = 18 A, RG = 25 Ω -------- 20 150 150 110 37 5.5 13 40 300 300 220 48 --- ㎱ ㎱ ㎱ ㎱ nC nC nC VDS = 160 V, ID = 18 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 18 A, VGS = 0 V IS = 18 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) --------200 1.50 18 72 1.5 --A V ㎱ μC Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1.16mH, IAS=18A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤18A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,July 2005 HFP640 Typical Characteristics ID, Drain Current [A] ※ Notes 1. 250us Pulse Test 2. Tc=25℃ ID, Drain Current [A] VGS 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V Bottom: 5.0V Top: ※ Notes 1. VDS=40V 2. 250us Pulse Test VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics RDS(ON)[Ω], Drain-Source On-Resistance IDR, Reverse Drain Current [A] ※ Notes : TJ=25℃ ※ Notes 1. VGS=0V 2. 250us Pulse Test ID, Drain Current [A] VSD, Source-Drain Voltage [V] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 2500 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS, Gate-Source Voltage [V] 2000 10 VDS = 40V VDS = 100V VDS = 160V Ciss Capacitances [pF] 8 1500 6 1000 Coss ※ Note ; 1. VGS = 0 V 2. f = 1 MHz 4 500 Crss 2 * Note : ID = 18.0 A 0 -1 10 10 0 10 1 0 0 8 16 24 32 40 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ◎ SEMIHOW REV.A0,July 2005 HFP640 Typical Characteristics (continued) 1.2 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 ∗ Note : 0.9 * Note : 1. VGS = 0 V 2. ID = 250 μA 0.5 1. VGS = 10 V 2. ID = 1.0 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature 20 Figure 8. On-Resistance Variation vs Temperature 10 2 Operation in This Area is Limited by R DS(on) 100 μs 16 ID, Drain Current [A] 10 1 10 ms 100 ms DC ID, Drain Current [A] 1 ms 12 10 0 8 10 -1 * Notes : o 1. TC = 25 C 2. TJ = 150 C o 4 10 -2 3. Single Pulse 0 10 10 1 10 2 0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [℃] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 10 0 D = 0 .5 Zθ JC Thermal Response (t), 0 .2 10 -1 0 .1 0 .0 5 0 .0 2 0 .0 1 ※ N o te s : 1 . Z θ J C t) = 0 .9 ℃ /W M a x . ( 2 . D u ty F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C t) ( PDM s in g le p u ls e 10 -2 t1 -3 t2 10 0 10 -5 10 -4 10 10 -2 10 -1 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [ s e c ] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,July 2005 HFP640 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF Same Type as DUT VDS VGS Qg 10V VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDD ( 0.5 rated VDS ) VDS 90% 10V DUT Vin 10% td(on) t on tr td(off) t off tf Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms VDS ID RG L VDD BVDSS IAS BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD ID (t) DUT VDD tp 10V VDS (t) Time ◎ SEMIHOW REV.A0,July 2005 HFP640 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG Same Type as DUT VDD VGS • dv/dt controlled by RG • IS controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,July 2005 HFP640 Package Dimension TO-220 (A) 9.90±0.20 . φ3 60 ±0 0 .2 4.50±0.20 1.30±0.20 15.70±0.20 2.80±0.20 9.19±0.20 6.50±0.20 13.08±0.20 0.80±0.20 2.54typ 2.54typ 0.50±0.20 3.02±0.20 1.27±0.20 1.52±0.20 2.40±0.20 ◎ SEMIHOW REV.A0,July 2005 HFP640 TO-220 (B) ±0.20 . φ3 84 0 .2 ±0 4.57±0.20 1.27±0.20 15.44±0.20 2.74±0.20 9.14±0.20 6.30±0.20 2.67±0.20 13.28±0.20 1.27±0.20 2.67±0.20 2.54typ 2.54typ 0.81±0.20 0.40±0.20 ◎ SEMIHOW REV.A0,July 2005