HFP75N75

HFP75N75 Mar 2007 BVDSS = 75 V HFP75N75 75V N-Channel MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 77 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.0105 Ω (Typ.) @VGS=10V  100% Avalanche Tested RDS(on) typ=10.5 mΩ ID = 80 A TO-220 1 2 3 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TC=25℃ unless otherwise specified Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Value 75 80 56 320 ±20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ 1476 80 16 7.0 160 0.91 -55 to +175 300 Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Resistance Characteristics Symbol RθJC RθCS RθJA Junction-to-Case Case-to-Sink Junction-to-Ambient Parameter Typ. -0.5 -Max. 0.94 -62.5 ℃/W Units ◎ SEMIHOW REV.A1,Mar 2007 HFP75N75 Electrical Characteristics TC=25 °C Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 40 A 2.0 --4.0 V Ω 0.0105 0.012 Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to25℃ VDS = 75 V, VGS = 0 V VDS = 60 V, TC = 150℃ VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V 75 ------0.06 ------1 10 100 -100 V V/℃ ㎂ ㎂ ㎁ ㎁ ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---4340 834 55 5640 1080 72 ㎊ ㎊ ㎊ Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 4,5) VDS = 37.5 V, ID = 80 A, RG = 25 Ω -------- 30 193 130 136 77 22 19 60 380 260 270 100 --- ㎱ ㎱ ㎱ ㎱ nC nC nC VDS = 60 V, ID = 80 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 80 A, VGS = 0 V IS = 80 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) --------68 160 80 320 1.5 --A V ㎱ μC Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=307.5uH, IAS=80A, VDD=25V, RG=25Ω, Starting TJ =25°C 3. ISD≤80A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A1,Mar 2007 HFP75N75 Typical Characteristics ID , Drain Current [A] 102 150oC 25oC 101 -55oC * Note 1. VDS = 40V 2. 250µs Pulse Test 100 2 4 6 8 10 VGS , Gate-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics 0.014 0.013 0.012 0.011 0.010 0.009 0.008 VGS = 20V * Note : TJ = 25oC IDR , Reverse Drain Current [A] RDS(on) , [Ω] Drain-Source On-Resistance 102 VGS = 10V 150oC 10 1 25oC * Note : 1. VGS = 0V 2. 250µs Pulse Test 0 25 50 75 100 125 150 175 200 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID , Drain Current [A] VSD , Source-Drain Voltage [V] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 8000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 VDS = 15V 6000 VGS, Gate-Source Voltage [V] 10 VDS = 37.5V VDS =60V Capacitances [pF] Coss 4000 8 Ciss Crss * Note ; 1. VGS = 0 V 2. f = 1 MHz 6 4 2000 2 * Note : ID = 80.0 A 0 10-1 100 101 0 0 20 40 60 80 100 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ◎ SEMIHOW REV.A1,Mar 2007 HFP75N75 Typical Characteristics (continued) 1.2 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 * Note : 1. VGS = 10 V 2. ID = 40.0 A 0.9 * Note : 1. VGS = 0 V 2. ID = 250 µA 0.5 0.8 -100 -50 0 50 100 150 200 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 7. Breakdown Voltage Variation vs Temperature 103 80 Figure 8. On-Resistance Variation vs Temperature 102 100 µs 60 ID, Drain Current [A] 101 Operation in This Area is Limited by R DS(on) DC ID, Drain Current [A] 102 1 ms 10 ms 40 100 10-1 ∗ Notes : 1. TC = 25 oC 2. TJ = 175 C 3. Single Pulse o 20 10-2 100 101 0 25 50 75 100 125 150 175 VDS, Drain-Source Voltage [V] TC, Case Temperature [oC] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 100 D=0.5 ZθJC(t), Thermal Response 0.2 10-1 0.1 0.05 0.02 0.01 single pulse * Notes : 1. ZθJC(t) = 0.94 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 10-2 PDM t1 t2 100 101 10 -3 10-5 10-4 10-3 10-2 10-1 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A1,Mar 2007 HFP75N75 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF Same Type as DUT VDS VGS Qg 10V VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDD ( 0.5 rated VDS ) VDS 90% 10V DUT Vin 10% td(on) t on tr td(off) t off tf Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L VDS VDD ID RG DUT VDD BVDSS IAS BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD ID (t) VDS (t) tp 10V Time ◎ SEMIHOW REV.A1,Mar 2007 HFP75N75 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG Same Type as DUT VDD VGS • dv/dt controlled by RG • IS controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A1,Mar 2007 HFP75N75 Package Dimension TO-220 (A) 9.90±0.20 φ3 0± .6 0. 20 4.50±0.20 1.30±0.20 15.70±0.20 2.80±0.20 9.19±0.20 6.50±0.20 13.08±0.20 0.80±0.20 2.54typ 2.54typ 0.50±0.20 3.02±0.20 1.27±0.20 1.52±0.20 2.40±0.20 ◎ SEMIHOW REV.A1,Mar 2007 HFP75N75 TO-220 (B) ±0.20 . φ3 84 ±0 0 .2 4.57±0.20 1.27±0.20 15.44±0.20 2.74±0.20 9.14±0.20 6.30±0.20 2.67±0.20 13.28±0.20 1.27±0.20 2.67±0.20 0.81±0.20 2.54typ 2.54typ 0.40±0.20 ◎ SEMIHOW REV.A1,Mar 2007