HFS11N40

HFS11N40 Dec 2005 BVDSS = 400 V HFS11N40 400V N-Channel MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 35 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.38 Ω (Typ.) @VGS=10V  100% Avalanche Tested RDS(on) typ = 0.38 Ω ID = 11.4 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TC=25℃ unless otherwise specified Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Value 400 11.4* 7.2* 45.6* ±30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ 520 11.4 14.7 4.5 50 0.4 -55 to +150 300 Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol RθJC RθJA Junction-to-Case Junction-to-Ambient Parameter Typ. --Max. 2.5 62.5 ℃/W Units ◎ SEMIHOW REV.A0,Dec 2005 HFS11N40 Electrical Characteristics TC=25 °C Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 5.7 A 2.5 --0.38 4.5 0.48 V Ω Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to25℃ VDS = 400 V, VGS = 0 V VDS = 320 V, TC = 125℃ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 400 ------0.41 ------1 10 100 -100 V V/℃ ㎂ ㎂ ㎁ ㎁ ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---1350 180 30 1750 240 39 ㎊ ㎊ ㎊ Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 4,5) VDS = 200 V, ID = 11.4 A, RG = 25 Ω -------- 35 120 80 80 35 7 17 70 240 160 160 45 --- ㎱ ㎱ ㎱ ㎱ nC nC nC VDS = 320 V, ID = 11.4 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 11.4 A, VGS = 0 V IS = 11.4 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) --------310 2.3 11.4 45.6 1.5 --A V ㎱ μC Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=7mH, IAS=11.4A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤11.4A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,Dec 2005 HFS11N40 Typical Characteristics Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 2400 12 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature VDS = 80V VDS = 200V VDS = 320V 8 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1800 Ciss 1200 Coss VGS, Gate-Source Voltage [V] 10 Capacitances [pF] 6 600 Crss ※ Note ; 1. VGS = 0 V 2. f = 1 MHz 4 2 ※ Note : ID = 11.4 A 0 -1 10 0 10 0 10 1 0 8 16 24 32 40 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ◎ SEMIHOW REV.A0,Dec 2005 HFS11N40 Typical Characteristics (continued) Figure 7. Breakdown Voltage Variation vs Temperature 12 2 Figure 8. On-Resistance Variation vs Temperature Operation in This Area is Limited by R DS(on) 10 10 ID, Drain Current [A] ID, Drain Current [A] 10 1 100 µs 1 ms 10 ms 100 ms DC 8 6 10 0 4 10 -1 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0 2 10 -2 10 10 1 10 2 10 3 0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [ ℃] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 10 0 D=0.5 0.2 0.1 0.05 ※ Notes : (t) W 1. Zθ JC = 2.5 ℃/ Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Zθ JC (t) Zθ JC Thermal Response (t), 10 -1 0.02 0.01 single pulse 10 -2 -5 -4 -3 -2 PDM t1 10 10 -1 t2 10 0 10 10 10 10 1 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,Dec 2005 HFS11N40 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF Same Type as DUT VDS VGS Qg 10V VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDD ( 0.5 rated VDS ) VDS 90% 10V DUT Vin 10% td(on) t on tr td(off) t off tf Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L VDS VDD ID RG DUT VDD BVDSS IAS BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD ID (t) VDS (t) tp 10V Time ◎ SEMIHOW REV.A0,Dec 2005 HFS11N40 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG Same Type as DUT VDD VGS • dv/dt controlled by RG • IS controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,Dec 2005 HFS11N40 Package Dimension TO-220F ±0.20 ± .18 3 0 0.2 ±0.20 2.54±0.20 0.70±0.20 φ 15.87±0.20 3.30±0.20 12.42±0.20 6.68±0.20 2.76±0.20 9.75±0.20 1.47max 0.80±0.20 2.54typ 2.54typ 0.50±0.20 ◎ SEMIHOW REV.A0,Dec 2005