HFS2N60S

HFS2N60S Nov 2007 BVDSS = 600 V HFS2N60S 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4.2 Ω (Typ.) @VGS=10V 100% Avalanche Tested RDS(on) typ = 4.2 Ω ID = 2.0 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TC=25℃ unless otherwise specified Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Value 600 2.0* 1.35* 8.0* ±30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ 120 2.0 5.4 4.5 23 0.18 -55 to +150 300 Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol RθJC RθJA Junction-to-Case Junction-to-Ambient Parameter Typ. --Max. 5.5 62.5 Units ℃/W ◎ SEMIHOW REV.A0,Nov 2007 HFS2N60S Electrical Characteristics TC=25 °C Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 1.0 A 2.0 --4.2 4.0 5.0 V Ω Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to 25℃ VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125℃ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ------0.6 ------1 10 100 -100 V V/℃ ㎂ ㎂ ㎁ ㎁ ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔT J IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---280 37 6.0 365 48 8.0 ㎊ ㎊ ㎊ Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 4,5) VDS = 300 V, ID = 2.0 A, RG = 25 Ω -------- 9 25 24 28 6.0 1.3 2.6 28 60 58 66 8.0 --- ㎱ ㎱ ㎱ ㎱ nC nC nC VDS = 480V, ID = 2.0 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 2.0 A, VGS = 0 V IS = 2.0 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) --------230 1.0 2.0 8.0 1.4 --A V ㎱ μC Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=56mH, IAS=2.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤2.0A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,Nov 2007 HFS2N60S Typical Characteristics ID, Drain Current [A] ID, Drain Current [A] VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics 12 9 VGS = 10V 6 3 VGS = 20V * Note : TJ = 25 C o 0 0 1 2 3 4 5 ID, Drain Current[A] IDR, Reverse Drain Current [A] Drain-Source On-Resistance RDS(ON)[Ω], VSD, Source-Drain Voltage [V] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 12 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature VDS = 120V VGS, Gate-Source Voltage [V] 10 VDS = 300V VDS = 480V Capacitance [pF] 8 6 4 2 * Note : ID = 2.0A 0 0 2 4 6 8 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ◎ SEMIHOW REV.A0,Nov 2007 HFS2N60S Typical Characteristics (continued) 1.2 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 ∗ Note : 0.9 * Note : 1. VGS = 0 V 2. ID = 250 μA 0.5 1. VGS = 10 V 2. ID = 1.0 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature 2.0 Figure 8. On-Resistance Variation vs Temperature 10 1 Operation in This Area is Limited by R DS(on) 100 μs ID, Drain Current [A] 10 0 10 ms 100 ms DC ID, Drain Current [A] 1 ms 1.5 1.0 10 -1 * Notes : o 1. TC = 25 C 2. TJ = 150 C o 0.5 10 -2 3. Single Pulse 0 10 10 1 10 2 10 3 0.0 25 50 75 100 o 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 10 1 D = 0 .5 (t), Thermal Response 10 0 0 .2 0 .1 0 .0 5 * N o te s : 1 . Z θ J C ( t ) = 5 .5 o C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 10 -1 0 .0 2 0 .0 1 θJC s in g le p u ls e 10 -2 PDM t1 10 -3 Z t2 0 10 -5 10 -4 10 -2 10 -1 10 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [s e c ] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,Nov 2007 HFS2N60S Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF Same Type as DUT VDS VGS Qg 10V VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDD ( 0.5 rated VDS ) VDS 90% 10V DUT Vin 10% td(on) t on tr td(off) t off tf Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms VDS ID RG L VDD BVDSS IAS BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD ID (t) DUT VDD tp 10V VDS (t) Time ◎ SEMIHOW REV.A0,Nov 2007 HFS2N60S Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG Same Type as DUT VDD VGS • dv/dt controlled by RG • IS controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,Nov 2007 HFS2N60S Package Dimension TO-220F ±0.20 ±0.20 .1 8 φ3 .20 ±0 2.54±0.20 0.70±0.20 15.87±0.20 3.30±0.20 12.42±0.20 6.68±0.20 2.76±0.20 9.75±0.20 1.47max 0.80±0.20 2.54typ 2.54typ 0.50±0.20 ◎ SEMIHOW REV.A0,Nov 2007