HFS5N60U

BVDSS = 600 V RDS(on) typ ȍ HFS5N60U ID = 4.5 A 600V N-Channel MOSFET TO-220F FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology 1 2 3 1.Gate 2. Drain 3. Source ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 10.5 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ7\S#9GS=10V ‰ 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS TC=25୅ unless otherwise specified Parameter Drain-Source Voltage Value Units 600 V Drain Current – Continuous (TC = 25୅) 4.5* A Drain Current – Continuous (TC = 100୅) 2.8* A IDM Drain Current – Pulsed 18* A VGS Gate-Source Voltage ρ30 V EAS Single Pulsed Avalanche Energy (Note 2) 163 mJ IAR Avalanche Current (Note 1) 4.5 A EAR Repetitive Avalanche Energy (Note 1) 12.3 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25୅) - Derate above 25୅ 44 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds ID (Note 1) 0.35 W/୅ -55 to +150 ୅ 300 ୅ * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Typ. Max. RșJC Symbol Junction-to-Case Parameter -- 2.83 RșJA Junction-to-Ambient -- 62.5 Units ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝;ΒΪ͑ͣͣ͑͢͡ HFS5N60U May 2012 Week Marking Package Packing Quantity RoHS Status HFS5N60U YWWX TO-220F Tube 50 Pb Free HFS5N60US YWWX TO-220F Tube 50 Pb Free HFS5N60U YWWXg TO-220F Tube 50 Halogen Free HFS5N60US YWWXg TO-220F Tube 50 Halogen Free ୔ HFS5N60U : Dual Gauge, HFS5N60US : Single Gauge Electrical Characteristics TC=25 qC Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 Ꮃ 2.5 -- 4.5 V Static Drain-Source On-Resistance VGS = 10 V, ID = 2.25 A -- 2.0 2.5 Ÿ 600 -- -- V -- 0.6 -- V/୅ Off Characteristics BVDSS Drain-Source Breakdown Voltage ǻBVDSS Breakdown Voltage Temperature Coefficient /ǻTJ IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS = 0 V, ID = 250 Ꮃ ID = 250 Ꮃ, Referenced to 25୅ VDS = 600 V, VGS = 0 V -- -- 1 Ꮃ VDS = 480 V, TC = 125୅ -- -- 10 Ꮃ VGS = ρ30 V, VDS = 0 V -- -- ρ100 Ꮂ VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 600 780 Ꮔ -- 60 78 Ꮔ -- 7.7 10 Ꮔ -- 22 44 Ꭸ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 300 V, ID = 4.5 A, RG = 25 Ÿ (Note 4,5) VDS = 480V, ID = 4.5 A, VGS = 10 V (Note 4,5) -- 40 80 Ꭸ -- 45 90 Ꭸ -- 35 70 Ꭸ -- 10.5 13.5 nC -- 3.5 -- nC -- 3 -- nC Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 4.5 ISM Pulsed Source-Drain Diode Forward Current -- -- 18 VSD Source-Drain Diode Forward Voltage IS = 4.5 A, VGS = 0 V -- -- 1.4 V IS = 4.5 A, VGS = 0 V diF/dt = 100 A/ȝV (Note 4) -- 243 -- Ꭸ -- 1.5 -- ȝ& trr Reverse Recovery Time Qrr Reverse Recovery Charge A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=14.8mH, IAS=4.5A, VDD=50V, RG=25:, Starting TJ =25qC 3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC 4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH” 5. Essentially Independent of Operating Temperature క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝;ΒΪ͑ͣͣ͑͢͡ HFS5N60U Package Marking and Odering Information Device Marking HFS5N60U Typical Characteristics 101 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 10 ID, Drain Current [A] ID, Drain Current [A] Top : 25oC 150oC -25oC * Notes : 1. 300us Pulse Test 2. TC = 25oC * Notes : 1. VDS= 30V 2. 300us Pulse Test 10-1 0.1 2 VDS, Drain-Source Voltage [V] 4 6 8 10 VGS, Gate-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics 5 IDR, Reverse Drain Current [A] RDS(ON) [:], Drain-Source On-Resistance 6 VGS = 10V 4 3 2 VGS = 20V 1 10 1 150oC 25oC * Notes : 1. VGS= 0V 2. 300us Pulse Test Note : TJ = 25oC 0.1 0.0 0 0 2 4 6 8 10 0.6 0.8 1.0 1.2 Ciss 600 Coss 400 * Note ; 1. VGS = 0 V 2. f = 1 MHz 200 Crss 12 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 800 Capacitances [pF] 0.4 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 1000 0.2 VSD, Source-Drain Voltage [V] ID, Drain Current [A] VDS = 120V VDS = 300V 10 VDS = 480V 8 6 4 2 Note : ID = 4.5A 0 10-1 100 101 0 0 3 6 9 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 12 క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝;ΒΪ͑ͣͣ͑͢͡ (continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance 1.2 BVDSS, (Normalized) Drain-Source Breakdown Voltage HFS5N60U Typical Characteristics 1.1 1.0 0.9  Note : 1. VGS = 0 V 2. ID = 250PA 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 Note : 1. VGS = 10 V 2. ID = 2.25 A 0.5 0.0 -100 200 -50 0 50 100 150 200 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 5 102 Operation in This Area is Limited by R DS(on) 100 Ps 4 ID, Drain Current [A] 1 ms 10 ms 100 ms 100 DC 10-1 10-2 0 10 * Notes : 1. TC = 25 oC 3 2 1 2. TJ = 150 oC 3. Single Pulse 101 102 0 25 103 50 75 100 125 150 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area ZTJC(t), Thermal Response ID, Drain Current [A] 101 Figure 10. Maximum Drain Current vs Case Temperature D=0.5 100 0.2 * Notes : 1. ZTJC(t) = 2.83 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZTJC(t) 0.1 0.05 10-1 0.02 PDM 0.01 t1 single pulse -2 10 10-5 10-4 10-3 10-2 10-1 t2 100 101 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝;ΒΪ͑ͣͣ͑͢͡ HFS5N60U Fig 12. Gate Charge Test Circuit & Waveform .ȍ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝;ΒΪ͑ͣͣ͑͢͡ HFS5N60U Package Dimension {vTYYWmG ±0.20 ±0.20 .2 ±0 0 2.54±0.20 6.68±0.20 0.70±0.20 12.42±0.20 3.30±0.20 2.76±0.20 1.47max 9.75±0.20 15.87±0.20  ij 0.80±0.20 0.50±0.20 2.54typ 2.54typ TO-220FM TO-220F క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝;ΒΪ͑ͣͣ͑͢͡