HFU2N60

HFD2N60 / HFU2N60 July 2005 BVDSS = 600 V HFD2N60 / HFU2N60 600V N-Channel MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 9.0 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 4.0 Ω (Typ.) @VGS=10V  100% Avalanche Tested RDS(on) typ = 4.0 Ω ID = 1.8 A D-PAK 2 1 1 3 2 3 I-PAK HFD2N60 HFU2N60 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA=25 °C) * TC=25℃ unless otherwise specified Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Value 600 1.8 1.1 7.2 ±30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/℃ ℃ ℃ 150 1.8 4.4 5.5 2.5 44 0.35 -55 to +150 300 Power Dissipation (TC = 25℃) - Derate above 25℃ TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Resistance Characteristics Symbol RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient* Junction-to-Ambient Parameter Typ. ---Max. 2.87 50 110 ℃/W Units * When mounted on the minimum pad size recommended (PCB Mount) ◎ SEMIHOW REV.A0,July 2005 HFD2N60 / HFU2N60 Electrical Characteristics TC=25 °C Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 0.9 A 2.5 --4.0 4.5 5.0 V Ω Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to25℃ VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125℃ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ------0.65 ------1 10 100 -100 V V/℃ ㎂ ㎂ ㎁ ㎁ ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---330 40 8.0 430 52 10.5 ㎊ ㎊ ㎊ Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 4,5) VDS = 300 V, ID = 2.0 A, RG = 25 Ω -------- 15 40 40 30 9.0 1.9 3.8 30 80 80 60 11.5 --- ㎱ ㎱ ㎱ ㎱ nC nC nC VDS = 480 V, ID = 2.0 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 1.8 A, VGS = 0 V IS = 2.0 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) --------220 1.1 1.8 7.2 1.4 --A V ㎱ μC Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=68mH, IAS=2.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤1.8A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,July 2005 HFD2N60 / HFU2N60 Typical Characteristics Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 450 400 350 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS, Gate-Source Voltage [V] 10 VDS = 120V VDS = 300V VDS = 480V Capacitances [pF] 300 250 200 150 100 50 0 -1 10 Ciss Coss 8 6 Crss ※ Note ; 1. VGS = 0 V 2. f = 1 MHz 4 2 ※ Note : ID = 2.0 A 0 10 0 10 1 0 1 2 3 4 5 6 7 8 9 10 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ◎ SEMIHOW REV.A0,July 2005 HFD2N60 / HFU2N60 Typical Characteristics (continued) Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 2.0 ID, Drain Current [A] 1.5 1.0 0.5 0.0 25 50 75 100 125 150 TC, Case Temperature [ ℃] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature Zθ JC Thermal Response (t), 10 0 D=0.5 0.2 0.1 0.05 ※ Notes : (t) W 1. Zθ JC = 2.87 ℃/ Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Zθ JC (t) 10 -1 0.02 0.01 single pulse PDM t1 t2 0 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 10 1 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,July 2005 HFD2N60 / HFU2N60 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF Same Type as DUT VDS VGS Qg 10V VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDD ( 0.5 rated VDS ) VDS 90% 10V DUT Vin 10% td(on) t on tr td(off) t off tf Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L VDS VDD ID RG DUT VDD BVDSS IAS BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD ID (t) VDS (t) tp 10V Time ◎ SEMIHOW REV.A0,July 2005 HFD2N60 / HFU2N60 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG Same Type as DUT VDD VGS • dv/dt controlled by RG • IS controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,July 2005 HFD2N60 / HFU2N60 Package Dimension TO-252 6.6±0.2 5.35±0.15 2.3±0.1 0.5±0.05 5.6±0.2 2.7±0.3 1±0.2 9.7+0.5 -0.3 1.2±0.3 0.05+0.1 -0.05 0.8±0.2 0.6±0.2 2.3typ 2.3typ 0.5+0.1 -0.05 ◎ SEMIHOW REV.A0,July 2005 1.2±0.3 HFD2N60 / HFU2N60 Package Dimension TO-251 6.6±0.2 5.35±0.15 2.3±0.1 0.5±0.05 0.8±0.15 7.5±0.3 0.75±0.15 5.6±0.2 7±0.2 0.6±0.1 2.3typ 2.3typ 0.5+0.1 -0.05 1.2±0.3 ◎ SEMIHOW REV.A0,July 2005