HFU2N60S

HFD2N60S_HFU2N60S Nov 2007 BVDSS = 600 V HFD2N60S / HFU2N60S 600V N-Channel MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 6.0 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 4.2 Ω (Typ.) @VGS=10V  100% Avalanche Tested RDS(on) typ = 4.2 Ω ID = 1.9 A D-PAK 2 1 1 3 2 3 I-PAK HFD2N60S HFU2N60S 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25℃) * TC=25℃ unless otherwise specified Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Value 600 1.9 1.14 7.6 ±30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/℃ ℃ ℃ 120 1.9 4.4 4.5 2.5 44 0.35 -55 to +150 300 Power Dissipation (TC = 25℃) - Derate above 25℃ TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Resistance Characteristics Symbol RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient* Junction-to-Ambient Parameter Typ. ---Max. 2.87 50 110 ℃/W Units * When mounted on the minimum pad size recommended (PCB Mount) ◎ SEMIHOW REV.A0,Nov 2007 HFD2N60S_HFU2N60S Electrical Characteristics TC=25 °C Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 0.95 A 2.0 --4.2 4.0 5.0 V Ω Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to 25℃ VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125℃ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ------0.6 ------1 10 100 -100 V V/℃ ㎂ ㎂ ㎁ ㎁ ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---280 37 6.0 365 48 8.0 ㎊ ㎊ ㎊ Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 4,5) VDS = 300 V, ID = 2.0 A, RG = 25 Ω -------- 9 25 24 28 6.0 1.3 2.6 28 60 58 66 8.0 --- ㎱ ㎱ ㎱ ㎱ nC nC nC VDS = 480V, ID = 2.0 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 1.9 A, VGS = 0 V IS = 2.0 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) --------230 1.0 1.9 7.6 1.4 --A V ㎱ μC Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=56mH, IAS=2.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤1.9A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,Nov 2007 HFD2N60S_HFU2N60S Typical Characteristics ID, Drain Current [A] ID, Drain Current [A] VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics 12 RDS(ON)[Ω], Drain-Source On-Resistance 9 VGS = 10V 6 3 VGS = 20V * Note : TJ = 25oC 0 0 1 2 3 4 5 ID, Drain Current[A] IDR, Reverse Drain Current [A] VSD, Source-Drain Voltage [V] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 12 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature VDS = 120V VGS, Gate-Source Voltage [V] 10 VDS = 300V VDS = 480V Capacitance [pF] 8 6 4 2 * Note : ID = 2.0A 0 0 2 4 6 8 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ◎ SEMIHOW REV.A0,Nov 2007 HFD2N60S_HFU2N60S Typical Characteristics (continued) 1.2 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 ∗ Note : 1. VGS = 10 V 2. ID = 0.95 A 0.9 * Note : 1. VGS = 0 V 2. ID = 250 µA 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [oC] Figure 7. Breakdown Voltage Variation vs Temperature 2.0 Figure 8. On-Resistance Variation vs Temperature 10 1 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] 1 ms 100 ID, Drain Current [A] 100 µs 1.5 10 ms 100 ms DC * Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse 1.0 0.5 10-1 0 10 101 102 103 0.0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [oC] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature D=0.5 ZθJC(t), Thermal Response 100 0.2 0.1 0.05 10-1 * Notes : 1. ZθJC(t) = 2.87 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.02 0.01 single pulse PDM t1 t2 101 10 -2 10-5 10-4 10-3 10-2 10-1 100 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,Nov 2007 HFD2N60S_HFU2N60S Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF Same Type as DUT VDS VGS Qg 10V VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDD ( 0.5 rated VDS ) VDS 90% 10V DUT Vin 10% td(on) t on tr td(off) t off tf Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L VDS VDD ID RG DUT VDD BVDSS IAS BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD ID (t) VDS (t) tp 10V Time ◎ SEMIHOW REV.A0,Nov 2007 HFD2N60S_HFU2N60S Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG Same Type as DUT VDD VGS • dv/dt controlled by RG • IS controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,Nov 2007 HFD2N60S_HFU2N60S Package Dimension TO-252 6.6±0.2 5.35±0.15 2.3±0.1 0.5±0.05 5.6±0.2 2.7±0.3 1±0.2 9.7+0.5 -0.3 1.2±0.3 0.05+0.1 -0.05 0.8±0.2 0.6±0.2 2.3typ 2.3typ 0.5+0.1 -0.05 ◎ SEMIHOW REV.A0,Nov 2007 1.2±0.3 HFD2N60S_HFU2N60S Package Dimension TO-251 6.6±0.2 5.35±0.15 2.3±0.1 0.5±0.05 0.8±0.15 7.5±0.3 0.75±0.15 5.6±0.2 7±0.2 0.6±0.1 2.3typ 2.3typ 0.5+0.1 -0.05 1.2±0.3 ◎ SEMIHOW REV.A0,Nov 2007