HFU3N80

HFD3N80/HFU3N80 Dec 2005 BVDSS = 800 V HFD3N80/HFU3N80 800V N-Channel MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 17 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 4.0 Ω (Typ.) @VGS=10V  100% Avalanche Tested RDS(on) typ = 4.0 Ω ID = 2.5 A D-PAK 2 1 1 3 2 3 I-PAK HFD3N80 HFU3N80 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25℃) * TC=25℃ unless otherwise specified Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Value 800 2.5 1.57 10 ±30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/℃ ℃ ℃ 320 2.5 7.0 4.5 2.5 70 0.56 -55 to +150 300 Power Dissipation (TC = 25℃) - Derate above 25℃ TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Resistance Characteristics Symbol RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient* Junction-to-Ambient Parameter Typ. ---Max. 1.78 50 110 ℃/W Units * When mounted on the minimum pad size recommended (PCB Mount) ◎ SEMIHOW REV.A0,Dec 2005 HFD3N80/HFU3N80 Electrical Characteristics TC=25 °C Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 1.25 A 2.5 --4.0 4.5 4.8 V Ω Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to25℃ VDS = 800 V, VGS = 0 V VDS = 640 V, TC = 125℃ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 800 ------0.99 ------1 10 100 -100 V V/℃ ㎂ ㎂ ㎁ ㎁ ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---700 70 7 910 90 9 ㎊ ㎊ ㎊ Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 4,5) VDS = 400 V, ID = 3.0 A, RG = 25 Ω -------- 20 55 30 40 17 4.5 7.5 40 110 60 80 22 --- ㎱ ㎱ ㎱ ㎱ nC nC nC VDS = 640V, ID = 3.0 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 2.5 A, VGS = 0 V IS = 3.0 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) --------650 5.2 2.5 10 1.4 --A V ㎱ μC Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=67mH, IAS=3.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤2.5A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,Dec 2005 HFD3N80/HFU3N80 Typical Characteristics ID, Drain Current [A] ID, Drain Current [A] VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics IDR, Reverse Drain Current [A] RDS(on), [Ω] Drain-Source On-Resistance 10 1 10 0 150 ℃ 25 ℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 1500 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature VDS = 160V 1200 VGS, Gate-Source Voltage [V] 10 VDS = 400V VDS = 640V Capacitance [pF] Ciss 900 8 Coss 600 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 6 4 300 Crss 2 ※ Note : ID = 3.0A 0 -1 10 0 10 0 10 1 0 4 8 12 16 20 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ◎ SEMIHOW REV.A0,Dec 2005 HFD3N80/HFU3N80 Typical Characteristics (continued) 1.2 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 1.5 A 0.9 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature 3.0 101 Operation in This Area is Limited by R DS(on) Figure 8. On-Resistance Variation vs Temperature 2.5 ID, Drain Current [A] ID, Drain Current [A] 103 100 µs 1 ms 10 ms 100 2.0 1.5 100 ms DC * Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse 1.0 0.5 10-1 0 10 101 102 0.0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [ ℃] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 10 0 D=0.5 0.2 0.1 ※ Notes : (t) W 1. Zθ JC = 1.78 ℃/ Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Zθ JC (t) Zθ JC Thermal Response (t), 10 -1 0.05 0.02 0.01 single pulse PDM t1 -3 10 -2 t2 0 10 -5 10 -4 10 10 -2 10 -1 10 10 1 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,Dec 2005 HFD3N80/HFU3N80 Typical Characteristics 1.2 (continued) 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 1.5 A 0.9 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 3.0 Operation in This Area is Limited by R DS(on) 10 1 2.5 ID, Drain Current [A] ID, Drain Current [A] 100 µs 1 ms 10 0 2.0 10 ms DC 1.5 1.0 10 -1 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.5 10 -2 10 0 10 1 10 2 10 3 0.0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [ ℃] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 10 0 D=0.5 0.2 0.1 ※ Notes : (t) W 1. Zθ JC = 1.78 ℃/ Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Zθ JC (t) Zθ JC Thermal Response (t), 10 -1 0.05 0.02 0.01 single pulse PDM t1 -3 t2 10 0 10 -2 10 -5 10 -4 10 10 -2 10 -1 10 1 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,Dec 2005 HFD3N80/HFU3N80 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF Same Type as DUT VDS VGS Qg 10V VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDD ( 0.5 rated VDS ) VDS 90% 10V DUT Vin 10% td(on) t on tr td(off) t off tf Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L VDS VDD ID RG DUT VDD BVDSS IAS BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD ID (t) VDS (t) tp 10V Time ◎ SEMIHOW REV.A0,Dec 2005 HFD3N80/HFU3N80 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG Same Type as DUT VDD VGS • dv/dt controlled by RG • IS controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,Dec 2005 HFD3N80/HFU3N80 Package Dimension TO-252 6.6±0.2 5.35±0.15 2.3±0.1 0.5±0.05 5.6±0.2 2.7±0.3 1±0.2 9.7+0.5 -0.3 1.2±0.3 0.05+0.1 -0.05 0.8±0.2 0.6±0.2 2.3typ 2.3typ 0.5+0.1 -0.05 ◎ SEMIHOW REV.A0,Dec 2005 1.2±0.3 HFD3N80/HFU3N80 Package Dimension TO-251 6.6±0.2 5.35±0.15 2.3±0.1 0.5±0.05 0.8±0.15 7.5±0.3 0.75±0.15 5.6±0.2 7±0.2 0.6±0.1 2.3typ 2.3typ 0.5+0.1 -0.05 1.2±0.3 ◎ SEMIHOW REV.A0,Dec 2005