HFW50N06

HFW50N06_HFI50N06 Nov 2009 BVDSS = 60 V HFW50N06 / HFI50N06 60V N-Channel MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 40 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.018 Ω (Typ.) @VGS=10V  100% Avalanche Tested RDS(on) = 18 mΩ ID = 50 A D2-PAK I2-PAK HFW50N06 HFI50N06 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage TC=25℃ unless otherwise specified Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Value 60 50 35.4 200 ±25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/℃ ℃ ℃ Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25℃)* Power Dissipation (TC = 25℃) - Derate above 25℃ 490 50 12 7.0 3.75 120 0.8 -55 to +175 300 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Resistance Characteristics Symbol RθJC Rθ JA RθJA Junction-to-Case Junction-to-Ambient* Junction-to-Ambient Parameter Typ. ---Max. 1.24 40 62.5 ℃/W Units * When mounted on the minimum pad size recommended (PCB Mount) ◎ SEMIHOW REV.A0,Mar 2009 HFW50N06_HFI50N06 Electrical Characteristics TC=25 °C Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 25 A 2.0 --0.018 4.0 0.022 V Ω Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to25℃ VDS = 60 V, VGS = 0 V VDS = 48 V, TC = 150℃ VGS = 25 V, VDS = 0 V VGS = -25 V, VDS = 0 V 60 ------0.06 ------1 10 100 -100 V V/℃ ㎂ ㎂ ㎁ ㎁ ΔBVDSS Breakdown Voltage Temperature /ΔTJ Coefficient IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---1600 600 90 2100 780 120 ㎊ ㎊ ㎊ Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 4,5) VDS = 30 V, ID = 25 A, RG = 25 Ω -------- 15 105 60 65 40 10 17 40 220 130 140 52 --- ㎱ ㎱ ㎱ ㎱ nC nC nC VDS = 48 V, ID = 50 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 50 A, VGS = 0 V IS = 50 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) --------52 75 50 200 1.5 --A V ㎱ μC Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=230μH, IAS=50A, VDD=25V, RG=25Ω, Starting TJ =25°C 3. ISD≤50A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,Mar 2009 HFW50N06_HFI50N06 Typical Characteristics ID, Drain Current [A] ID, Drain Current [A] VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics ID, Drain Current [A] IDR, Reverse Drain Current [A] RDS(ON)[Ω], Drain-Source On-Resistance VSD, Source-Drain Voltage [V] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 3000 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 Capacitances [pF] 2000 Ciss Coss VGS, Gate-Source Voltage [V] 2500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = 30V 10 VDS = 48V 8 1500 ※ Note ; 1. VGS = 0 V 2. f = 1 MHz 6 1000 4 Crss 500 2 ※ Note : ID = 50 A 0 -1 10 0 10 0 10 1 0 10 20 30 40 50 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ◎ SEMIHOW REV.A0,Mar 2009 HFW50N06_HFI50N06 Typical Characteristics (continued) 1.2 2.5 BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(ON), (Normalized) Drain-Source On-Resistance 2.0 1.1 1.5 1.0 1.0 0.9 * Note : 1. VGS = 0 V 2. ID = 250 µA 0.5 ∗ Note : 1. VGS = 10 V 2. ID = 25 A 0.8 -100 -50 0 50 100 150 200 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 7. Breakdown Voltage Variation vs Temperature 103 Operation in This Area is Limited by R DS(on) Figure 8. On-Resistance Variation vs Temperature 60 50 ID, Drain Current [A] 102 ID, Drain Current [A] 100 µs 1 ms 10 ms 40 30 101 * Notes : 1. TC = 25 oC 2. TJ = 175 oC 3. Single Pulse DC 20 10 100 10-1 100 101 102 0 25 50 75 100 125 150 175 VDS, Drain-Source Voltage [V] TC, Case Temperature [oc] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 100 Zθ JC(t), Thermal Response D=0.5 0.2 0.1 10-1 * Notes : 1. ZθJC(t) = 1.24 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.05 0.02 0.01 PDM single pulse t1 10-2 10-1 10-2 10-5 t2 100 101 10-4 10-3 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,Mar 2009 HFW50N06_HFI50N06 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF Same Type as DUT VDS VGS Qg 10V VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDD ( 0.5 rated VDS ) VDS 90% 10V DUT Vin 10% td(on) t on tr td(off) t off tf Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L VDS VDD ID RG DUT VDD BVDSS IAS BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD ID (t) VDS (t) tp 10V Time ◎ SEMIHOW REV.A0,Mar 2009 HFW50N06_HFI50N06 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG Same Type as DUT VDD VGS • dv/dt controlled by RG • IS controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,Mar 2009 HFW50N06_HFI50N06 Package Dimension ◎ SEMIHOW REV.A0,Mar 2009 HFW50N06_HFI50N06 Package Dimension ◎ SEMIHOW REV.A0,Mar 2009