HFW9N50

HFW9N50_HFI9N50 June 2005 BVDSS = 500 V HFW9N50 / HFI9N50 500V N-Channel MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 35 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.58 Ω (Typ.) @VGS=10V  100% Avalanche Tested RDS(on) typ = 0.58 Ω ID = 9.0 A D2-PAK I2-PAK HFW9N50 HFI9N50 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25℃) * TC=25℃ unless otherwise specified Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Value 500 9.0 5.7 36 ±30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/℃ ℃ ℃ 360 9.0 14.7 4.5 3.13 147 1.18 -55 to +150 300 Power Dissipation (TC = 25℃) - Derate above 25℃ TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Resistance Characteristics Symbol RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient* Junction-to-Ambient Parameter Typ. ---Max. 0.85 40 62.5 ℃/W Units * When mounted on the minimum pad size recommended (PCB Mount) ◎ SEMIHOW REV.A0 June 2005 HFW9N50_HFI9N50 Electrical Characteristics TC=25 °C Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 4.5 A 2.5 --0.58 4.5 0.73 V Ω Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to25℃ VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125℃ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 500 ------0.55 ------1 10 100 -100 V V/℃ ㎂ ㎂ ㎁ ㎁ ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---1300 150 24 1700 195 31 ㎊ ㎊ ㎊ Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 4,5) VDS = 250 V, ID = 9.0 A, RG = 25 Ω -------- 35 120 70 80 35 7.3 17 70 240 140 160 45 --- ㎱ ㎱ ㎱ ㎱ nC nC nC VDS = 400V, ID = 9.0 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 9.0 A, VGS = 0 V IS = 9.0 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) --------320 2.8 9.0 36 1.4 --A V ㎱ μC Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=8mH, IAS=9.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤9.0A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0 June 2005 HFW9N50_HFI9N50 Typical Characteristics 101 ID , Drain Current [A] ID , Drain Current [A] VGS 15 V 10 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : 10 1 150 ℃ 25 ℃ 10 0 100 -55 ℃ ※ Note 1. VDS = 40V 2. 250μ s Pulse Test ※ Note : 1. 250μ s Pulse Test 2. TC = 25 ℃ 10 -1 10 -1 100 101 10 -1 2 4 6 8 10 VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics 1.8 1.6 VGS = 10V 1.4 1.2 1.0 0.8 0.6 0.4 VGS = 20V IDR , Reverse Drain Current [A] RDS(on) , [Ω] Drain-Source On-Resistance 10 1 10 0 150 ℃ -1 25 ℃ ※ Note : TJ = 25 ℃ ※ Note : 1. VGS = 0V 2. 250μ s Pulse Test 0 5 10 15 20 25 30 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID , Drain Current [A] VSD , Source-Drain Voltage [V] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 2400 VGS, Gate-Source Voltage [V] Ciss 1800 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = 100V 10 VDS = 250V VDS = 400V Capacitances [pF] 8 1200 Coss 6 600 Crss ※ Note ; 1. VGS = 0 V 2. f = 1 MHz 4 2 ※ Note : ID = 9.0 A 0 -1 10 0 10 0 10 1 0 5 10 15 20 25 30 35 40 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ◎ SEMIHOW REV.A0 June 2005 HFW9N50_HFI9N50 Typical Characteristics 1.2 (continued) 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 ※ Note : 1. VGS = 10 V 2. ID = 4.5 A 0.9 ※ Note : 1. VGS = 0 V 2. ID = 250 μ A 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 10 10 2 Operation in This Area is Limited by R DS(on) 8 ID, Drain Current [A] 10 1 1 ms 10 ms DC ID, Drain Current [A] 100 µs 10 µs 6 4 10 0 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 2 10 -1 10 0 10 1 10 2 10 3 0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [ ℃] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 10 0 D=0.5 Zθ JC Thermal Response (t), 0.2 10 -1 0.1 0.05 0.02 0.01 single pulse ※ Notes : (t) W 1. Zθ JC = 0.85 ℃/ Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Zθ JC (t) PDM t1 -3 10 -2 t2 10 0 10 -5 10 -4 10 10 -2 10 -1 10 1 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0 June 2005 HFW9N50_HFI9N50 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF Same Type as DUT VDS VGS Qg 10V VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDD ( 0.5 rated VDS ) VDS 90% 10V DUT Vin 10% td(on) t on tr td(off) t off tf Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L VDS VDD ID RG DUT VDD BVDSS IAS BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD ID (t) VDS (t) tp 10V Time ◎ SEMIHOW REV.A0 June 2005 HFW9N50_HFI9N50 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG Same Type as DUT VDD VGS • dv/dt controlled by RG • IS controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0 June 2005 HFW9N50_HFI9N50 Package Dimension ◎ SEMIHOW REV.A0 June 2005 HFW9N50_HFI9N50 Package Dimension ◎ SEMIHOW REV.A0 June 2005