HSB100-8

Preliminary HSB100-8 HSB100-8 Silicon Controlled Rectifier VDRM = 600 V IT(RMS) = 0.8A Symbol 3.Anode FEATURES 2.Gate Repetitive Peak Off-State Voltage: 600V R.M.S On-state Current (IT(RMS)=0.8A) Average On-state Current (IT(AV)=0.5A) Low On-State Voltage (1.2VTyp@ITM) 1.Cathode 1. K 2. G 3. A 3 2 1 General Description PNPN Devices designed for high volume, line-powered consumer applications such as relay and lamp driver, small motor controls, gate drivers for larger thyristors and sensing and detection circuits. Supplied in and inexpensive plastic TO-92 package which is readily adaptable for use in automatic insertion equipment. HSB100-8 Absolute Maximum Ratings Symbol VDRM IT(RMS) IT(AV) ITSM I2t PGM PG(AV) VRGM IFGM TSTG Tj Parameter Repetitive Peak Off-State Voltage (Ta=25℃) Value 600 0.8 0.5 10 0.415 0.1 0.01 5 1 -40 to +125 -40 to +125 Units V A A A A2s W W V A ℃ ℃ R.M.S On-State Current (All conduction angles) Average On-State Current (Half Sine Wave : TC=74℃) Surge On-State Current (1/2 Cycle, 60Hz, Peak, Non Repetitive) Circuit Fusing Considerations (t=8.3mS) Forward Peak Gate Power Dissipation (Ta=25℃) Forward Average Gate Power Dissipation (Ta=25℃, t=8.3mS) Reverse Peak Gate Voltage Forward Peak Gate Current Storage Temperature Range Operating Junction Temperature ◎ SEMIHOW REV.1.0 Jan 2007 Preliminary HSB100-8 Electrical Characteristics Symbol IGT VGT VGD IH Parameter Gate Trigger Current (1) (Ta=25℃) Test Conditions VAK=7V, RL=100Ω VAK=7V, RL=100Ω, Ta=25℃ VAK=7V, RL=100Ω, Ta=-40℃ VAK=12V(DC), RL=100Ω, TC=125℃ VAK=12V, Gate open, Initiating current=50mA, Ta=25℃ Ta=-40℃ VAK=VDRM or VRRM, TC=25℃ VAK=VDRM or VRRM, TC=125℃ ITM=1A, Peak Min Typ Max 200 0.8 1.2 Units uA V V V Gate Trigger Voltage(1) Non Trigger Gate Voltage Holding Current Repetitive Peak Off-State Current Peak On-State Voltage(2) 0.2 2 2 5 10 10 200 1.2 1.7 mA mA uA uA V IDRM VTM (1) (2) RGK Current is not included in measurement Forward current applied for 1ms maximum duration, duty cycle ≤ 1% Thermal Characteristics Symbol RTH(J-C) RTH(J-A) Parameter Thermal Resistance Thermal Resistance Test Conditions Junction to Case Junction to Ambient 60 Min Typ Max 1.3 Units ℃/W ℃/W Performance Curves Fig 1. HSB100-8 Current Derating (Reference : Case Temperature) Fig 2. HSB100-8 Current Derating (Reference : Ambient Temperature) 120 a a=Conduction Angle 100 Ta, Max allowable Ambient Temperature (℃) Typical Printed Circuit Board Mounting 110 a=Conduction Angle a Case Measurement Point Center of Flat portion Tc, Max allowable Case Temperature (℃) 90 DC 80 70 a=30˚ 50 60˚ 90˚ 120˚ 180˚ 60 DC 40 a=30˚ 20 0 0.1 0.2 60˚ 90˚ 120˚ 180˚ 0 0.1 0.2 0.3 0.4 IT(AV) Average On-State Current (A) 0.5 0.3 0.4 IT(AV) Average On-State Current (A) ◎ SEMIHOW REV.1.0 Jan 2007 Preliminary HSB100-8 Package Dimensions HSB100-8 (TO-92) Dimension Table Ref Dimension (mm) Min A B C C1 L a c 4.43 4.43 3.46 0.92 13.97 0.36 2.54(Typ) ◎ SEMIHOW REV.1.0 Jan 2007 Max 4.83 4.83 3.96 1.12 14.97 0.56 Preliminary HSB100-8 Taping Dimensions 项目 F1、F2 F P P1 P2 H0 H H1 W0 W1 W W2 D0 说明 左右脚的中心线到中间脚的中心线的距离 左右脚的中心线之间的距离 相邻两只管的中间脚之间的距离 孔中心到右脚的垂直距离 孔中心到中间脚的垂直距离 孔中心到成形处的垂直距离 孔中心到塑封体下缘的垂直距离 孔中心到塑封体上缘的垂直距离 热熔胶带宽度 孔中心到线带上缘的距离 线带宽度 热熔胶带和线带的高度之差 孔径 标准值 2.5 +0.2, -0.1 5.0 +0.6, -0.2 12.7±0.5 3.85±0.5 6.35±0.5 16.0±0.5 19.5±1 Max27 6.0±0.5 9.0±0.5 18.0+1.0, -0.5 Max1.0 4.0±0.2 ◎ SEMIHOW REV.1.0 Jan 2007