HSC106D
HSC106D
Sensitive Gate Silicon Controlled Rectifier
FEATURES
Repetitive Peak Off-State Voltage (VRM= 400V) R.M.S On-state Current (IT(RMS)=4.0A) Average On-state Current (IT(AV)=2.55A) Sensitive Gate Triggering (0.2mAMax@25℃)
VDRM
= 400 V
IT(RMS) = 4.0A
Symbol
2.Anode
3.Gate 1.Cathode
General Description
Glassivated PNPN devices designed for high volume consumer applications such as temperature, light and speed control ; process and remote control, and warning systems where reliability of operation is important.
1 2 3
HSC106D
Absolute Maximum Ratings
Symbol VDRM VRRM IT(RMS) IT(AV) ITSM I2t PGM PG(AV) VGRM IFGM TSTG Tj Parameter
(TJ=25℃)
Value 400 400 4.0 2.55 20 1.65 0.5 0.1 6.0 0.2 -40 to +150 -40 to +110
Units V V A A A A2s W W V A ℃ ℃
Repetitive Peak Off-State Voltage (Forward) Repetitive Peak Off-State Voltage (Reverse) On-State R.M.S Current (180˚ Condition Angles, TC=80℃) On-State Average Current (180˚ Condition Angles, TC=80℃) Surge On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive, Tj = 110 °C) Circuit Fusing Considerations (t=8.3mS) Forward Peak Gate Power Dissipation (Pulse Width ≤1.0μsec,Tc=80℃) Forward Average Gate Power Dissipation (Pulse Width ≤1.0μsec, Tc=80℃) Reverse Peak Gate Voltage Forward Peak Gate Current (Pulse Width ≤1.0 μsec, Tc=80℃) Storage Temperature Range Operating Junction Temperature
◎ SEMIHOW REV.1.1 May 2007
HSC106D
Electrical Characteristics
Symbol IGT VGT VGD Parameter Gate Trigger Current(1) Gate Trigger Voltage(1) Non Trigger Gate Voltage
(Ta=25℃)
Test Conditions VAK= 6VDC, RL= 100Ω, TJ= 25℃ VAK= 6VDC, RL= 100Ω, TJ= -40℃ VAK= 6VDC, RL= 100Ω, TJ= 25℃ VAK= 6VDC, RL= 100Ω, TJ= -40℃ VAK= 12VDC, RL= 100Ω, TC= 110℃ VAK= 12VDC, Gate open, Initiating current=20mA, TJ= 25℃ TJ= -40℃ TJ = 110℃ VAK= 12VDC, IG= 20mA, Gate Open, TJ= 25℃ TJ= 110℃ VAK= VDRM or VRRM, TC= 25℃ TC= 110℃
Min
Typ 15 35
Max 200 500 0.8 1.0
Units uA V V
0.4 0.5 0.2
0.6 0.75
IH
Holding Current
0.19 0.33 0.07 0.2 0.35
3.0 6.0 2.0 5.0 10 100 2.2
mA
IL IDRM IRRM VTM dv/dt
(1) (2)
Latching Current Repetitive or Reverse Peak Blocking Current Peak Forward On-State Voltage(2) Critical Rate of Rise Off state Voltage
mA uA uA V V/uS
IFM=1A VAK = VDRM, Exponential waveform, RGK= 1㏀, Gate open, TJ=110℃ 8.0
RGK Current is not included in measurement Pulse Test : Pulse width ≤ 2.0mS, Duty Cycle ≤ 2%
Thermal Characteristics
Symbol RTH(J-C) RTH(J-A) TL Parameter Thermal Resistance Thermal Resistance Conditions Junction to Case Junction to Ambient Min Typ Max 3.0 75 260 Units ℃/W ℃/W ℃
Maximum Lead Temperature for Soldering Purpose 1/8”, from case for 10second
◎ SEMIHOW REV.1.1 May 2007
HSC106D
Performance Curves
Fig 1. Average Current Derating
110 100
TC, Case Temperature (℃) P(AV), Average On-State Power Dissipation (Watt)
Fig 2. Maximum On-State Power Dissipation
10 Junction Temperature = 110℃
90 80 70 60 50 40 30 20 10 0 .4 .8 1.2 Half Sine Wave Resistive or Inductive Load 50 to 400Hz
DC
8 Half Sine Wave Resistive or Inductive Load 50 to 400Hz DC
6
4
2
0 0 .4 .8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
IT(AV) Average On-State Current (A)
1.6 2.0 2.4
2.8
3.2 3.6 4.0
IT(AV) Average On-State Current (A)
Fig 3. Typical Gate Trigger Current vs Junction Temperature
100 100
Fig 4. Typical Holding Current vs Junction Temperature
IGT, Gate Trigger Current (μA)
IH, Holding Current (μA)
10
10
1 -40 -25 -10 5 20 35 50 65 80 95 110
TJ Junction Temperature (℃)
1 -40 -25 -10 5 20 35 50 65 80 95 110
TJ Junction Temperature (℃)
Fig 5. Typical Gate Trigger Voltage vs Junction Temperature
1.0 0.9
VGT, Gate Trigger Voltage (V)
Fig 6. Typical Latching Current vs Junction Temperature
1000
0.7 0.6 0.5 0.4 0.3 0.2 -40 -25 -10
IL, Latching Current (μA)
0.8
100
10 5 20 35 50 65 80 95 110 -40 -25 -10 5 20 35 50 65 80 95 110
TJ Junction Temperature (℃)
TJ Junction Temperature (℃)
◎ SEMIHOW REV.1.1 May 2007
HSC106D
Package Dimension
HSC106D (TO-126)
A
C
φ
D
L1
b a L
B
C1
p
p
Dimension Table
Symbol A B C C1 D L 3.6 Dimension Min 1.27 Typ 4.0 13.0 Max 8.5 12.0 2.8 Symbol L1 φ a b p
Unit :[ mm]
Dimension Min 2.3 3.0 0.7 1.2 Typ 2.3 Max 2.7 3.4 0.86
◎ SEMIHOW REV.1.1 May 2007
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