KSC13003H

KSC13003H 0 KSC13003H ◎ SEMIHOW REV.A1,Oct 2007 KSC13003H 0 KSC13003H Switch Mode series NPN silicon Power Transistor Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 1.5 Amperes NPN Silicon Power Transistor 20 Watts Absolute Maximum Ratings CHARACTERISTICS Collector-Base Voltage Collector-Emitter Voltage Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature TC=25℃ unless otherwise noted SYMBOL VCBO VCEO VEBO IC ICP IB PC TJ TSTG RATING 900 530 9 1.5 3 0.75 20 150 -65~150 UNIT V V V A A A W ℃ ℃ TO-126 1. Base 2. Collector 3. Emitter 1 2 3 Electrical Characteristics Characteristics CHARACTERISTICS Collector-Emitter Breakdown Voltage Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage TC=25℃ unless otherwise noted SYMBOL VCEO IEBO hFE1 hFE2 VCE(sat) Test Condition IC=5mA, IB=0 VEB=9V,IC=0 VCE=2V,IC=0.5A VCE=2V,IC=1A IC=0.5A,IB=0.1A IC=1A,IB=0.25A IC=1.5A,IB=0.5A IC=0.5A,IB=0.1A IC=1A,IB=0.25A VCB=10V, f=0.1MHz Min 400 Typ. Max Unit V 10 9 5 40 0 .5 1 3 1 1.2 21 4 1.1 4.0 0.7 ㎂ V V V V V ㎊ ㎒ ㎲ ㎲ ㎲ *Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn on Time on Time Storage Time Fall Time * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% VBE(sat) Cob fT ton tstg tF VCE=10V,IC=0.1A Vcc=125V, Ic=2A IB1=0.2A, IB2= -0.2A RL=125Ω Note. R hFE1 Classification O Y 20 ~ 30 25 ~ 35 35 35 ~ 40 Package Mark information. S SemiHow symbol Y; year code, WW; week code WW hFE1 Classification S YWW Z KSC13003H YWW Z ◎ SEMIHOW REV.A1,Oct 2007 KSC13003H 0 Typical Characteristics ◎ SEMIHOW REV.A1,Oct 2007 KSC13003H 0 Package Dimension TOTO-126 8.5max ± 3.2 φ 0.2 2.8max 3.8±0.2 12max 1.27typ 2.5±0.2 13max 1.2±0.2 0.78±0.08 2.3max 2.3max 0.5±0.1 Dimensions in Millimeters ◎ SEMIHOW REV.A1,Oct 2007