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KSH5027A

KSH5027A

  • 厂商:

    SEMIHOW

  • 封装:

  • 描述:

    KSH5027A - High Voltage and High Reliability - SemiHow Co.,Ltd.

  • 详情介绍
  • 数据手册
  • 价格&库存
KSH5027A 数据手册
KSH5027A 2 KSH5027A ◎ SEMIHOW REV.A0,Oct 2007 KSH5027A 2 KSH5027A High Voltage and High Reliability Voltage and High Reliability - High Speed Switching - Wide SOA 3 Amperes NPN Silicon Power Transistor 50 Watts Absolute Maximum Ratings CHARACTERISTICS Collector-Base Voltage Collector-Emitter Voltage Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature TC=25℃ unless otherwise noted SYMBOL VCBO VCEO VEBO IC ICP IB PC TJ TSTG RATING 1100 800 7 3 10 1.5 50 150 -55~150 UNIT V V V A A A W ℃ ℃ TO-220 1. Base 2. Collector 3. Emitter 12 3 Electrical Characteristics CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Collector Cut0off Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn on Time Storage Time Fall Time Time TC=25℃ unless otherwise noted SYMBOL VCBO VCEO VEBO ICEX(sus) ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Cob fT ton tstg tf Test Condition IC=1mA, IE=0 IC=5mA, IB=0 IE=1mA, IE=0 IC=1.5A, IB1=-IB2=0.3A L=2mH, Clamped VCB=800V,IE=0 VEB=5V,IC=0 VCE=5V,IC=0.2A VCE=5V,IC=1A IC=1.5A,IB=0.3A IC=1.5A,IB=0.3A VCB=10V,IE=0, f=0.1MHz Min 1100 800 7 800 Typ. Max Unit V V V V 10 10 10 8 40 2 1.5 60 15 0.5 3.0 0.3 ㎂ ㎂ V V ㎊ ㎒ ㎲ ㎲ ㎲ VCE=10V,IC=0.2A Vcc=400V, Ic=5A IB1=-2.5A, IB2=2A RL=200Ω Note : hFE1 Classification R :10 ~ 20, O : 15 ~ 30, Y : 20 ~ 40 ◎ SEMIHOW REV.A0,Oct 2007 KSH5027A 2 Typical Characteristics Figure 1. Static Characteristic Figure 2. DC current Gain Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Figure 4. Base-Emitter On Voltage Figure 5. Switching Time Figure 6. Safe Operating Area ◎ SEMIHOW REV.A0,Oct 2007 KSH5027A 2 Typical Characteristics ( Continued ) Figure 7. Reverse Bias Operating Area Figure 8. Power Derating ◎ SEMIHOW REV.A0,Oct 2007 KSH5027A 2 Package Dimension TOTO-220 (A) 9.90±0.20 60 3. φ 0 .2 ±0 4.50±0.20 1.30±0.20 15.70±0.20 2.80±0.20 9.19±0.20 6.50±0.20 13.08±0.20 0.80±0.20 2.54typ 2.54typ 0.50±0.20 3.02±0.20 1.27±0.20 1.52±0.20 2.40±0.20 Dimensions in Millimeters ◎ SEMIHOW REV.A0,Oct 2007 KSH5027A 2 Package Dimension TOTO-220 (B) ±0.20 84 3. φ 0 .2 ±0 4.57±0.20 1.27±0.20 15.44±0.20 2.74±0.20 9.14±0.20 6.30±0.20 2.67±0.20 13.28±0.20 1.27±0.20 2.67±0.20 2.54typ 2.54typ 0.81±0.20 0.40±0.20 Dimensions in Millimeters ◎ SEMIHOW REV.A0,Oct 2007
KSH5027A
物料型号: - 型号为KSH5027A。

器件简介: - KSH5027A是一款高电压、高可靠性、高速开关的NPN硅功率晶体管,具有3安培的电流承载能力,功率为50瓦特,封装为TO-220。

引脚分配: - 1. Base(基极) - 2. Collector(集电极) - 3. Emitter(发射极)

参数特性: - 绝对最大额定值: - 集电极-基极电压VCBO:1100V - 集电极-发射极电压VCEO:800V - 发射极-基极电压VEBO:7V - 集电极电流(DC)IC:3A - 集电极电流(脉冲)ICP:10A - 基极电流IB:150mA - 集电极耗散功率(Tc=25℃):50W - 结温Tj:150℃ - 存储温度Tstg:-55~150℃

- 电气特性(TC=25℃除非另有说明): - 集电极-基极击穿电压VCBO:1100V - 集电极-发射极击穿电压VCEO:800V - 发射极-基极击穿电压VEBO:7V - 集电极-发射极维持电压ICEX(sus):800V - 集电极截止电流ICBO:10μA - 发射极截止电流IEBO:10μA - DC电流增益hFE1:10至40 - DC电流增益hFE2:8 - 集电极-发射极饱和电压VCE(sat):2V - 基极-发射极饱和电压VBE(sat):1.5V - 输出电容Cob:60pF - 电流增益-带宽积fT:15MHz - 导通时间ton:0.5μs - 存储时间tstg:3.0μs - 下降时间tf:0.3μs

功能详解: - KSH5027A具有高速开关能力和宽安全工作区(SOA),适用于需要高电压、高可靠性和高速开关的应用场合。

应用信息: - 该型号适用于高电压、高可靠性和高速开关的应用,如电源、电机驱动、变频器等。

封装信息: - 封装类型为TO-220,这是一种常见的功率晶体管封装,适用于多种不同的应用场景。
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