12AC12T4V1

SKiiP 12AC12T4V1 Absolute Maximum Ratings Symbol Conditions IGBT Values Units MiniSKiiP®1 3-phase bridge inverter SKiiP 12AC12T4V1 Inverse Diode Module Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications* Remarks AC 1 29-10-2008 LAN © by SEMIKRON SKiiP 12AC12T4V1 Characteristics Symbol Conditions Inverse Diode min. typ. max. Units MiniSKiiP®1 3-phase bridge inverter SKiiP 12AC12T4V1 Temperature sensor Features This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. Typical Applications* Remarks AC 2 29-10-2008 LAN © by SEMIKRON SKiiP 12AC12T4V1 Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TS) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 3 29-10-2008 LAN © by SEMIKRON SKiiP 12AC12T4V1 Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT and Diode Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovered charge 4 29-10-2008 LAN © by SEMIKRON SKiiP 12AC12T4V1 UL recognized file no. E 63 532 5 29-10-2008 LAN © by SEMIKRON